Bonding, Handling, and Mounting Procedures for

Chip Diode Devices

M/A-COM Products

Rev. V3

Application Note

M541

4

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Figure 3. Die Bonding Criteria

Die Down

Method

Visual

(Good Bond Criteria)

Typical Bond Strength

(In Stress)

1

Die Down (0.020” Chip)

Conductive Epoxy

Flat and max epoxy thickness

~0.001 inch - 90% min wetting

~ 50-100 kgms/cm

2

Less than 0.15 ohms

Soft Solder

Flat - max solder thickness

0.001 inch - 90% min wetting

~ 70-100 kgms/cm

2

Less than 0.10 ohms

Gold-tin Eutectic Solder

Thermal Compression Bond

Flat - max solder thickness

0.001 inch - 90% min wetting

Flat - 90% min wetting

~ 100-150 kgms/cm

2

~ 100 kgms/cm

2

Less than 0.10 ohms

Less than 0.10 ohms

Note: 1. This is the approximate extra RF series resistance from an ideal lossless bond of 0.020” x 0.020” chip

Table 2. Visual Inspection for Good Die-Down Bonds (Using a 5-15x Microscope)

Table 3. Methods for Top-Bonding Diode Chips

Type of Chip

Type of Circuit Board

Ceramic

Teflon Fiberglass Metal Ground

Planer Chip with Gold Metal on Anode

Wedge bond 0.002 diameter gold wire or 0.001 x 0.005 strap.

Bonding tool must be smaller than anode pad.

Beam Lead

Ultrasonic bond

Bonding tip size 0.002 minimum

Special tools are available for beam leads

NOT RECOMMENDED

Schottky Diodes with Planer Contacts

Wedge bond 0.0007 diameter gold wire.

Bonding tip size 0.001 maximum

Hermetic CERMACHIP ™

Wedge bond.

0.001 x 0.005 strap is best

Bonding tip size 0.005 maximum

Wedge bond, or parallel gap

Or welded strap

Planer Chips with Very Small Node

Pads (less than 0.002)

Wedge bond 0.0007 to 0.001 diameter gold wire.

Bonding tip size 0.001 maximum

Mesa Diodes (Small)

Wedge bond. Use 5 mil strap, if possible

Bonding tool tip size 0.001 to 0.002.