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RHF350 Datasheet(PDF) 4 Page - STMicroelectronics |
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RHF350 Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 23 page ![]() Electrical characteristics RHF350 4/23 Doc ID 15604 Rev 4 2 Electrical characteristics Note: All electrical parameters apply both pre and post irradiation. Post irradiation data are guaranteed by qualification, they are not tested in production. Table 4. Radiations Value Unit TID High dose rate (50 - 300 rad / sec.) up to 300 krad Heavy-ions SEL immunity (at 125 °C) up to SEU characterized up to 110 MeV.cm²/mg Table 5. Electrical characteristics for VCC = ±2.5 V, (unless otherwise specified) Symbol Parameter Test conditions Temp.(1) Min. Typ. Max. Unit DC performance Vio Input offset voltage +125 °C -4 1 4 mV +25 °C -4 0.4 4 -55 °C -4 0.8 4 Iib+ Non-inverting input bias current +125 °C 8.5 35 µA +25 °C 9 35 -55 °C 9 35 Iib- Inverting input bias current +125 °C 2.5 25 µA +25 °C 2 20 -55 °C 1.8 25 CMR Common mode rejection ratio 20 log ( ∆Vic/∆Vio) ∆Vic = ±1 V +125 °C 50 55 dB +25 °C 54 57 -55 °C 50 58 SVR Supply voltage rejection ratio 20 log ( ∆VCC/∆Vio) ∆VCC = 3.5 V to 5 V +125 °C 55 87 dB +25 °C 68 87 -55 °C 55 88 PSRR Power supply rejection ratio 20 log ( ∆VCC/∆Vout) ∆VCC =200 mVpp at 1 kHz +25 °C 51 dB ICC Supply current No load +125 °C 3.8 4.9 mA +25 °C 4 4.9 -55 °C 4 4.9 |
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