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RT5002 Datasheet(PDF) 14 Page - Richtek Technology Corporation

Part # RT5002
Description  7 1 Channel DC/DC PMU with Li-Ion Battery Charger for DSC
PDF  40 Pages
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Manufacturer  RICHTEK [Richtek Technology Corporation]
Direct Link  http://www.richtek.com
Logo RICHTEK - Richtek Technology Corporation

RT5002 Datasheet(HTML) 14 Page - Richtek Technology Corporation

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RT5002
14
DS5002-00
November 2011
www.richtek.com
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
PGOOD Deglitch Time
tPGOOD
Time measured from VIN :
0 to 5V 1
μs rise-time to
PGOOD = 1 in I
2
C Register
--
1
--
s
Input Over Voltage Blanking
Time
tOVP
--
50
--
μs
Pre-Charge to Fast-Charge
Deglitch Time
tPF
--
25
--
ms
Fast-Charge to Pre-Charge
Deglitch Time
tFP
--
25
--
ms
Termination Deglitch Time
tTERMI
--
25
--
ms
Recharge Deglitch Time
tRECHG
--
100
--
ms
Input Power Loss to SYS LDO
Turn-Off Delay Time
tNO_IN
--
25
--
ms
Pack Tem perature Fault
Detection Deglitch Time
tTS
--
25
--
ms
Short Circuit Deglitch Time
tSHORT
--
250
--
μs
Short Circuit Recovery Time
tSHORT-R
--
64
--
ms
Other
VP Regulation Voltage
VVP
VDDM = 4.2V
3.234
3.3
3.366
V
VP Load Regulation
VVP
VP Source Out 2mA
--
--
-0.1
V
VP Under Voltage Lockout
Threshold
Falling Threshold
--
0.8
--
V
TS Battery Detect Threshold
VTS
2.75
2.85
2.95
V
NTC
Rising Threshold
when
TSSEL = L (100k NTC)
73
74
75
Low Temperature Trip Point
(0
°C)
VCOLD
Rising Threshold
when
TSSEL = H (10k NTC)
59
60
61
%
of VP
Low Temperature Trip Point
Hysteresis (near 0
°C)
ΔVCOLD
--
1
--
%
of VP
Falling Threshold when
TSSEL = L
27
28
29
High Temperature Trip Point
(60
°C)
VHOT
Falling Threshold when
TSSEL = H
37
38
39
%
of VP
High Temperature Trip Point
Hysteresis (near 60
°C)
ΔVHOT
--
1
--
%
of VP
Rising Threshold when
TSSEL = L (100k NTC)
63
64
65
Low Temperature Trip Point
(10
°C) for JEITA
Rising Threshold when
TSSEL = H (10k NTC)
53
54
55
%
of VP
Low Temperature Trip Point
Hysteresis (near 10
°C) for JEITA
--
1
--
%
of VP
Falling Threshold when
TSSEL = L
34
35
36
High Temperature Trip Point
(45
°C) for JEITA
Falling Threshold when
TSSEL = H
39
40
41
%
of VP
High Temperature Trip Point
Hysteresis (near 45
°C) for JEITA
--
1
--
%
of VP



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