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ADP3155 Datasheet(PDF) 10 Page - Analog Devices |
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ADP3155 Datasheet(HTML) 10 Page - Analog Devices |
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10 / 14 page ![]() REV. A ADP3155 –10– high side FET, however, is turned on with only 12 V – 5 V = 7 V. Checking the typical output characteristics of the device in the data sheet shows that for an output current of 10 A, and at a VGS of 7 V, the VDS is 0.15 V. This gives an RDS(ON) only slightly above the one specified at a VGS of 10 V, so the resistance in- crease due to the reduced gate drive can be neglected. The specified RDS(ON) at the expected highest FET junction tempera- ture of +140 °C must be modified by an R DS(ON) multiplier, using the graph in the data sheet. In this case: RDS(ON)MULT = 1.7 Using this multiplier, the expected RDS(ON) at +140°C is 1.7 × 14 m Ω = 24 mΩ. The high side FET dissipation is: PDFETHS = IRMSHS 2R DS(ON) + 0.5 VINILPEAKQGfMIN/IG ~ 3.72 W where the second term represents the turn-off loss of the FET. (In the second term, QG is the gate charge to be removed from the gate for turn-off and IG is the gate current. From the data sheet, QG is about 50 nC–70 nC and the gate drive current provided by the ADP3155 is about 1 A.) The low side FET dissipation is: PDFETLS = IRMSLS 2 R DS(ON) = 1.7 W (Note that there are no switching losses in the low side FET.) To maintain an acceptable MOSFET junction temperature, proper heat sinks should be used. The Thermalloy 6030 heat sink has a thermal impedance of 13 °C/W with convection cool- ing. With this heat sink, the junction-to-ambient thermal imped- ance of the chosen high side FET θ JAHS will be 13°C/W (heat sink-to-ambient) + 2 °C/W (junction-to-case) + 0.5°C/W (case- to-heat sink) = 15.5 °C/W. At full load, and at +50 °C ambient temperature, the junction temperature of the high side FET is: TJHSMAX = TA + θJAHS PDFETHS = +105°C The same heat sink may be used for the low side FET, e.g., the Thermalloy type 7141 ( θ = 20.3°C/W). With this heat sink, the junction temperature of the low side FET is: TJLSMAX = TA + θJALS PDFETLS = +106°C All of the above-calculated junction temperatures are safely below the +175 °C maximum specified junction temperature of the selected FETs. The maximum operating junction temperature of the ADP3155 is calculated as follows: TJICMAX = TA + θJA (IICVCC + PDR) where θ JA is the junction-to-ambient thermal impedance of the ADP3155 and PDR is the drive power. From the data sheet, θJA is equal to 110 °C/W and I IC = 2.7 mA. PDR can be calculated as follows: PDR = (CRSS + CISS)VCC 2 f MAX = 307 mW The result is: TJICMAX = +86°C CIN Selection and Input Current di/dt Reduction In continuous inductor-current mode, the source current of the high side MOSFET is a square wave with a duty ratio of VOUT/ VlN. To keep the input ripple voltage at a low value, one or more capacitors with low equivalent series resistance (ESR) and ad- equate ripple-current rating must be connected across the input terminals. The maximum rms current of the input bypass capacitors is: ICINRMS = 0.5 IOMAX = 7 A rms For an FA-type capacitor with 2700 µF capacitance and 10 V voltage rating, the ESR is 34 m Ω and the allowed ripple current at 100 kHz is 1.94 A. At +105 °C, at least four such capacitors must be connected in parallel to handle the calculated ripple current. At +50 °C ambient, however, a higher ripple current can be tolerated, so three capacitors in parallel are adequate. The ripple voltage across the three paralleled capacitors is: VCINRPL = IOMAX [ESRIN/3 +DMAXHF/(3 CIN fMIN )] = 140 mV p-p To further reduce the effect of the ripple voltage on the system supply voltage bus and to reduce the input-current di/dt to below the recommended maximum of 0.1 A/ µs, an additional small inductor (L > 1.7 µH @ 10 A) should be inserted between the converter and the supply bus (see Figure 2). Feedback Loop Compensation Design for Active Voltage Positioning Optimized compensation of the ADP3155 allows the best pos- sible containment of the peak-to-peak output voltage deviation. Any practical switching power converter is inherently limited by the inductor in its output current slew rate to a value much less than the slew rate of the load. Therefore, any sudden change of load current will initially flow through the output capacitors, and this will produce an output voltage deviation equal to the ESR of the output capacitor array times the load current change. To correctly implement active voltage positioning, the low fre- quency output impedance (i.e., the output resistance) of the converter should be made equal to the maximum ESR of the output capacitor array. This can be achieved by having a single pole roll-off of the voltage gain of the gm error amplifier, where the pole frequency coincides with the ESR zero of the output capacitor. A gain with single pole roll-off requires that the gm amplifier output pin be terminated by the parallel combination of a resistor and capacitor. The required resistor value can be calculated from the equation: R kRt kRt C TOTAL TOTAL = × 275 275 Ω Ω – where: Rt kR I VV TOTAL CS OMAX HI LO = ×× 16 4 . – Ω and where the quantities 16.4 k Ω and 275 kΩ are characteristic of the ADP3155 and the value of the current sense resistor, RCS, has already been determined as above. Although a single termination resistor equal to RC would yield the proper voltage positioning gain, the dc biasing of that resis- tor would determine how the regulation band is centered (i.e., offset). Note that sometimes the specified regulation band is asymmetrical with respect to the nominal VID voltage. With the ADP3155, the offset is already considered part of the design procedure—no special provision is required. To accomplish the |
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