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UM1693 Datasheet(PDF) 30 Page - STMicroelectronics

Part # UM1693
Description  M0-7 standard high-side drivers hardware design guide
PDF  196 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

UM1693 Datasheet(HTML) 30 Page - STMicroelectronics

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Reverse battery protection
UM1693
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DocID025505 Rev 1
Measured values (VND7020AJ-E)
Table 4 reports the measurement results on VND7020AJ-E test vehicle, according to the
schematic in Figure 11: VCC voltage on device is completely decoupled from the reverse
battery voltage. No negative voltage is present on MultiSense and on logic pins. By reverse
polarity, the MOSFET will be switched off, because the gate source voltage for this case will
be positive VGS > 0 (voltage drop over the Zener diode) and protects the HSD.
The same reverse polarity protection network can be shared among several HSD connected
to the battery.
A capacitor might be placed between gate and source of the P-channel MOSFET. The RC
filter composed by R2 and C can be dimensioned to be transparent against the fast negative
pulses ISO 7637-2:2004(E) pulse 1 test level IV, keeping the reverse polarity protection
circuitry switched ON. The usage of such capacitor C is not recommended, when the
system must be compliant to ISO 7637-2:2011(E) pulse 1 test level IV. In this case in fact it
is needed that the pulse does not discharge through the HSD and the conducting P-channel
MOSFET as this might be destructive for the HSD.
Figure 12. MOSFET solution in VCC – experiment VND7020AJ-E-E, ISOpulse 1
(-100 V, 90
Ω)
Figure 12 shows the example of a 55 V/16 m
Ω P-channel MOSFET in the schematics as
per Figure 11 submitted to ISO 7637:2-2004(E) pulse 1 transients. In order to limit the
Table 4. Static reverse battery - voltages on pins
Reverse battery
(
VBAT = -16 V)
Normal operation
(standby mode)
Normal operation
(out0 = on, out1 = off)
Normal operation
(out0 = on, out1 = on)
VBAT [V]
-16.02
14.02
14.00
13.98
VCC [V]
0
14.02
13.99
13.97
VG_Q1 [V]
0
0
0
0
IR2 [µA]
0
0
0
0
R2 = 1k
Gate capacitance discharging (~11nF)
MOSFET in avalanche



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