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AN2747 Datasheet(PDF) 20 Page - STMicroelectronics |
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AN2747 Datasheet(HTML) 20 Page - STMicroelectronics |
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20 / 44 page ![]() L6385 high-voltage high and low side driver AN2747 20/44 4 L6385 high-voltage high and low side driver Figure 16. L6385 block diagram The L6385 is a high-voltage device, manufactured with BCD "OFF-LINE" technology. It has a driver structure that enables to drive independently referenced N-Channel Power MOSFETs or IGBTs. The upper (floating) section is enabled to work with voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible for easy interfacing with controlling devices. The main characteristic of this driver are: ● high-voltage rail up to 600 V ● dV/dt immunity ± 50 V/nsec in full temperature range ● driver current capability: 400 mA source, 650 mA sink ● switching times 50/30 nsec rise/fall ● with 1 nF load ● CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down ● undervoltage lockout on lower and upper driving sections ● internal bootstrap diode ● outputs in phase with inputs |
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