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AN2839 Datasheet(PDF) 21 Page - STMicroelectronics |
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AN2839 Datasheet(HTML) 21 Page - STMicroelectronics |
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21 / 40 page ![]() AN2839 Designing an application with L6228 Doc ID 15104 Rev 1 21/40 where: Equation 17 tOCD(OFF), tOCD(ON), tD(ON)EN, tD(OFF)EN and ROPDR are device-intrinsic parameters and VDD is the pull-up voltage applied to REN. The external RC network, CEN in particular, must be selected to obtain a reasonable fast OCD intervention (short tDELAY) and a safe disable time (long tDISABLE). Figure 23 and Figure 24 show both tDISABLE and tDELAY as a function of CEN: at least 100 µs for tDISABLE are recommended, keeping the delay time between 1 and 2 µs at the same time. The internal open drain can also be turned on if the device experiences an over-temperature (OVT) condition. The OVT will cause the device to shut down when the die temperature exceeds the OVT threshold (TJ > 165 °C typ.). Since the OVT is also connected directly to the gate-drive circuit (see Figure 1 on page 1), all the Power DMOS’s will shut down, even if the EN pin voltage is still over Vth(OFF). When the junction temperature falls below the OVT turn-off threshold (150 °C typ.), the open drain turns off, CEN is recharged up to VTH(ON) and the Power DMOS’s are turned back on. 1.13 Power management Even when operating at current levels well below the maximum ratings of the device, the operating junction temperature must be kept below 125° C. Figure 25 on page 22 shows the IC’s dissipated power versus the RMS load current in four different driving sequences, assuming the supply voltage is 24 V. t EN FALL () R OPDR C EN V DD V TH OFF () ------------------------------ ln ⋅⋅ = Figure 23. Typical disable time vs. CEN for several values of REN Figure 24. Typical delay time vs. CEN AM01706v1 0 0 1 0 1 1 1 10 10 0 1 .10 3 C EN [n F ] R EN = 220 k Ω R EN = 10 0 k Ω R EN = 4 7 k Ω R EN = 33 k Ω R EN = 1 0 k Ω |
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