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AN4150 Datasheet(PDF) 6 Page - STMicroelectronics

Part # AN4150
Description  Power MOSFET technology gate current needs in a synchronous buck converter
PDF  20 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN4150 Datasheet(HTML) 6 Page - STMicroelectronics

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Synchronous buck converter description
AN4150
6/20
Doc ID 023526 Rev 1
In these conditions, it is interesting to analyze the switching transients.
In Figure 2, the HS and LS waveforms during LS turn-off are reported. The top half of the
image shows HS VGS (purple trace) and ID (grey trace), while the bottom half shows LS VGS
(red trace), VDS (blue trace), IG (light blue trace) and ID (light green trace).
The main LS turn-on steps are analyzed in detail, as follows:
1.
Low-side FET is in an ON state (in this case, VGG = 5 V), with load current flowing from
source to drain (green trace). At the end of (1), the driver begins to turn off the FET.
2.
VGS goes down from VGG to Vth and the gate current becomes negative and starts to
remove the charge stored in the device intrinsic capacitances. At the end of (2), the
gate-source voltage becomes equal to the threshold voltage (VGS = Vth): so, the gate
current is dropped to low values (intrinsic caps are discharged) and the load current
diverts from the Power MOSFET channel to the body-drain diode.
3.
During deadtime, the LS FET is in an OFF state (VGS = 0), VDS becomes negative (VDS
= -VF,DIODE) and the load current flows through the body-drain diode. As a
consequence, minority excess charge in both diode regions is created.
4.
The LS current decreases linearly, while the HS current increases linearly in direct
proportion to the fall of the LS FET current. To completely turn off the LS device, the
excess stored charge in its body diode must be removed: so, the reverse recovery
process generates an extra-current (IRR), which adds to the HS current. The maximum
HS current peak is, therefore, given by:
ID,HS = ILOAD + IRR
The spurious bouncing on the LS gate signal is caused by the voltage drop across
package parasitic inductances (especially, source inductance), related to negative dl/dt
(the current is falling to zero). Obviously, the bigger the parasitic inductance (package,
wire bonding and layout) the higher the bouncing amplitude. At the same time, the low-
side VDS is fixed by the parasitic inductance and dlD,LS/dt.
During device turn-off, the gate current is negative, because of the Power MOSFET intrinsic
capacitances discharge process. The current is sunk by the driver, with a speed linked to the
gate voltage level and overall gate resistance (RG,TOT = RG,INT + RDR,SINK).
It is important to underline that, at LS turn-off, the driver, external and intrinsic FET gate
resistance should be as low as possible in order to minimize the device shoot-through risks,
caused by high dv/dt across drain-source, coupled to the gate signals through Miller
capacitance in Figure 3.



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