| Electronic Components Datasheet Search |
|
AN4150 Datasheet(PDF) 14 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
AN4150 Datasheet(HTML) 14 Page - STMicroelectronics |
|
14 / 20 page ![]() Bench tests and simulation results overview AN4150 14/20 Doc ID 023526 Rev 1 In Table 2 the percentage variations (device B vs. device A) of the measured parameters are reported and defined as: As shown in Figure 12 and Table 2, device B shows higher values for almost all measured parameters; in particular, the gap becomes wide for maximum peak, average values at turn- on and off and maintenance current. Figure 12. Device A vs. device B (experimental results) Table 2. Percentage variation (experimental results) Device B vs. device A ΔIgate, max (A) 29.03% ΔIgate, min (A) 13.70% ΔIgate, avg(OFF) (A) 31.93% ΔIgate, avg(ON) (A) 29.41% ΔImaint (A) 31.58% Δtf (ns) 18.24% Δtr (ns) 18.05% Δt(I>0) (ns) 18.49% Δt(I<0) (ns) -2.16% 010 20 3040506070 80 90 100 Igate,max [A] Igate,min [A] Igate,avg (OFF) [A] Igate,avg (ON) [A] Imaint [A] fall time [ns] rise time [ns] t (I>0) [ns] t (I<0) [ns] Dev. B Dev. A Δ Δ AM14949v1 Δ parameter () BA – parameter () B parameter () A – parameter () B ---------------------------------------------------------------------------------- = |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |