Specifications ispLSI 1024/883

4

Switching Test Conditions

Input Pulse Levels

GND to 3.0V

Input Rise and Fall Time

≤ 3ns 10% to 90%

Input Timing Reference Levels

1.5V

Output Timing Reference Levels

1.5V

Output Load

See figure 2

3-state levels are measured 0.5V from steady-state

active level.

Table 2- 0003

DC Electrical Characteristics

Over Recommended Operating Conditions

0.4

–

-10

10

-150

-150

-200

215

I

I

0V

≤ V

3.5V

≤ V

0V

≤ V

0V

≤ V

V

V

f

–

–

–

–

–

–

–

135

–

2.4

–

–

–

–

–

–

CONDITION

PARAMETER

SYMBOL

MIN.

MAX.

Output Low Voltage

Output High Voltage

Input or I/O Low Leakage Current

Input or I/O High Leakage Current

isp Input Low Leakage Current

I/O Active Pull-Up Current

Output Short Circuit Current

Operating Power Supply Current

UNITS

V

V

µA

µA

µA

µA

mA

mA

1. One output at a time for a maximum duration of one second. V

degradation. Characterized but not 100% tested.

2. Measured using six 16-bit counters.

3. Typical values are at V

4. Maximum I

tion of this datasheet and Thermal Management section of the Lattice Semiconductor Data Book or CD-ROM to estimate maximum

I

0007A-24 mil

Figure 2. Test Load

+ 5V

R1

R2

Device

Output

Test

Point

Output Load Conditions (see figure 2)

Test Condition

R1

R2

CL

A

470

Ω

390

Ω

35pF

B

Active High

390

Ω

35pF

Active Low

470

Ω

390

Ω

35pF

Active High to Z

390

Ω

5pF

Cat V

Active Low to Z

470

Ω

390

Ω

5pF

at V

∞

∞

Table 2- 0004A