1

The RF MOSFET Line

RF Power Field-Effect Transistor

N–Channel Enhancement–Mode MOSFET

Designed for broadband commercial and military applications at frequencies

to 175 MHz. The high power, high gain and broadband performance of this

device makes possible solid state transmitters for FM broadcast or TV channel

frequency bands.

• Guaranteed Performance at 175 MHz, 50 V:

Output Power — 300 W

Gain — 14 dB (16 dB Typ)

Efficiency — 50%

• Low Thermal Resistance — 0.35°C/W

• Ruggedness Tested at Rated Output Power

• Nitride Passivated Die for Enhanced Reliability

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain–Source Voltage

125

Vdc

Drain–Gate Voltage

125

Vdc

Gate–Source Voltage

±40

Vdc

Drain Current — Continuous

40

Adc

Derate above 25

°C

500

2.85

Watts

W/

°C

Storage Temperature Range

– 65 to +150

°C

Operating Junction Temperature

200

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

0.35

°C/W

NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Order this document

by MRF151G/D

SEMICONDUCTOR TECHNICAL DATA

MRF151G

300 W, 50 V, 175 MHz

N–CHANNEL

BROADBAND

RF POWER MOSFET

CASE 375–04, STYLE 2

D

G

S

(FLANGE)

D

G

REV 9