MRF151G datasheet(2/9 Pages) MACOM

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS (Each Side)

Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA)

V(BR)DSS

125

—

Vdc

Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0)

IDSS

—

5.0

mAdc

Gate–Body Leakage Current (VGS = 20 V, VDS = 0)

IGSS

—

1.0

µAdc

ON CHARACTERISTICS (Each Side)

Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)

VGS(th)

1.0

3.0

5.0

Vdc

Drain–Source On–Voltage (VGS = 10 V, ID = 10 A)

VDS(on)

1.0

3.0

5.0

Vdc

Forward Transconductance (VDS = 10 V, ID = 5.0 A)

gfs

5.0

7.0

—

mhos

DYNAMIC CHARACTERISTICS (Each Side)

Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)

Ciss

—

350

—

Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)

Coss

—

220

—

Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)

Crss

—

FUNCTIONAL TESTS

Common Source Amplifier Power Gain

(VDD = 50 V, Pout = 300 W, IDQ = 500 mA, f = 175 MHz)

Gps

—

Drain Efficiency

(VDD = 50 V, Pout = 300 W, f = 175 MHz, ID (Max) = 11 A)

—

Load Mismatch

(VDD = 50 V, Pout = 300 W, IDQ = 500 mA,

VSWR 5:1 at all Phase Angles)

No Degradation in Output Power

Figure 1. 175 MHz Test Circuit

C10

BIAS 0 – 6 V

INPUT

D.U.T.

OUTPUT

–

C11

C12

50 V

R1 — 100 Ohms, 1/2 W

R2 — 1.0 kOhm, 1/2 W

C1 — Arco 424

C2 — Arco 404

C3, C4, C7, C8, C9 — 1000 pF Chip

C5, C10 — 0.1

µF Chip

C6 — 330 pF Chip

C11 — 0.47

µF Ceramic Chip, Kemet 1215 or

C11 — Equivalent (100 V)

C12 — Arco 422

L1 — 10 Turns AWG #18 Enameled Wire,

L1 — Close Wound, 1/4

″ I.D.

L2 — Ferrite Beads of Suitable Material for

L2 — 1.5 – 2.0

µH Total Inductance

Unless Otherwise Noted, All Chip Capacitors are ATC Type 100 or

Equivalent.

T1 — 9:1 RF Transformer. Can be made of 15 – 18 Ohms

T1 — Semirigid Co–Ax, 62 – 90 Mils O.D.

T2 — 1:4 RF Transformer. Can be made of 16 – 18 Ohms

T2 — Semirigid Co–Ax, 70–90 Mils O.D.

Board Material — 0.062

″ Fiberglass (G10),

1 oz. Copper Clad, 2 Sides,

εr = 5.0

NOTE: For stability, the input transformer T1 must be loaded

NOTE: with ferrite toroids or beads to increase the common

NOTE: mode inductance. For operation below 100 MHz. The

NOTE: same is required for the output transformer.

See Figure 6 for construction details of T1 and T2.

–

REV 9

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