MRF151G datasheet(3/9 Pages) MACOM

Part #	MRF151G

Description	N-CHANNEL BROADBAND RF POWER MOSFET

PDF	9 Pages

Scroll/Zoom	100%

Manufacturer	MACOM [Tyco Electronics]

Direct Link	http://www.macom.com

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3 / 9 page

Figure 2. Capacitance versus

Drain–Source Voltage*

Figure 3. Common Source Unity Gain Frequency

versus Drain Current*

Figure 4. Gate–Source Voltage versus

Case Temperature*

Figure 5. DC Safe Operating Area

TYPICAL CHARACTERISTICS

Figure 6. RF Transformer

*Data shown applies to each half of MRF151G.

1000

500

200

100

102030

4050

VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

1.04

0.9

– 25

100

TC, CASE TEMPERATURE (°C)

1.03

1.02

1.01

0.99

0.98

0.97

0.96

0.95

0.94

0.93

0.92

0.91

Ciss

Coss

Crss

ID = 5 A

4 A

2 A

1 A

250 mA

100 mA

100

200

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

2000

ID, DRAIN CURRENT (AMPS)

1000

VDS = 30 V

15 V

TC = 25°C

HIGH IMPEDANCE

WINDINGS

CENTER

TAP

CENTER

TAP

4:1

IMPEDANCE

RATIO

9:1

IMPEDANCE

RATIO

CONNECTIONS

TO LOW IMPEDANCE

WINDINGS

REV 9

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