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MAX1652EEE Datasheet(PDF) 15 Page - Maxim Integrated Products |
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MAX1652EEE Datasheet(HTML) 15 Page - Maxim Integrated Products |
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15 / 28 page ![]() High-Efficiency, PWM, Step-Down DC-DC Controllers in 16-Pin QSOP ______________________________________________________________________________________ 15 In discontinuous (light-load) mode, the synchronous switch is turned off as the inductor current falls through zero. The synchronous rectifier works under all operat- ing conditions, including idle mode. The synchronous- switch timing is further controlled by the secondary feedback (SECFB) signal in order to improve multiple- output cross-regulation (see Secondary Feedback- Regulation Loop section). Internal VL and REF Supplies An internal regulator produces the 5V supply (VL) that powers the PWM controller, logic, reference, and other blocks. This +5V low-dropout linear regulator can sup- ply up to 5mA for external loads, with a reserve of 20mA for gate-drive power. Bypass VL to GND with 4.7µF. Important: VL must not be allowed to exceed 5.5V. Measure VL with the main output fully loaded. If VL is being pumped up above 5.5V, the probable cause is either excessive boost-diode capacitance or excessive ripple at V+. Use only small-signal diodes for D2 (10mA to 100mA Schottky or 1N4148 are preferred) and bypass V+ to PGND with 0.1µF directly at the package pins. The 2.5V reference (REF) is accurate to ±1.6% over temperature, making REF useful as a precision system reference. Bypass REF to GND with 0.33µF minimum. REF can supply up to 1mA for external loads. However, if tight-accuracy specs for either VOUT or REF are essential, avoid loading REF with more than 100µA. Loading REF reduces the main output voltage slightly, according to the reference-voltage load regulation error. In MAX1654 applications, ensure that the SECFB divider doesn’t load REF heavily. When the main output voltage is above 4.5V, an internal P-channel MOSFET switch connects CSL to VL while simultaneously shutting down the VL linear regulator. This action bootstraps the IC, powering the internal cir- cuitry from the output voltage, rather than through a lin- ear regulator from the battery. Bootstrapping reduces power dissipation caused by gate-charge and quies- cent losses by providing that power from a 90%-effi- cient switch-mode source, rather than from a less efficient linear regulator. It’s often possible to achieve a bootstrap-like effect, even for circuits that are set to VOUT < 4.5V, by power- ing VL from an external-system +5V supply. To achieve this pseudo-bootstrap, add a Schottky diode between the external +5V source and VL, with the cathode to the VL side. This circuit provides a 1% to 2% efficiency boost and also extends the minimum battery input to less than 4V. The external source must be in the range of 4.8V to 5.5V. Boost High-Side Gate-Driver Supply (BST Pin) Gate-drive voltage for the high-side N-channel switch is generated by a flying-capacitor boost circuit as shown in Figure 5. The capacitor is alternately charged from the VL supply and placed in parallel with the high-side MOSFET’s gate-source terminals. On start-up, the synchronous rectifier (low-side MOS- FET) forces LX to 0V and charges the BST capacitor to 5V. On the second half-cycle, the PWM turns on the high-side MOSFET by closing an internal switch between BST and DH. This provides the necessary enhancement voltage to turn on the high-side switch, FB REF CSH CSL SLOPE COMPENSATION VL I1 R1 R2 TO PWM LOGIC OUTPUT DRIVER UNCOMPENSATED HIGH-SPEED LEVEL TRANSLATOR AND BUFFER I2 I3 Figure 4. Main PWM Comparator Block Diagram |
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