NXP Semiconductors

PSMN5R6-100PS

N-channel 100 V 5.6 mΩ standard level MOSFET in TO220

PSMN5R6-100PS

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Product data sheet

30 November 2012

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003aad702

1

10

1

10

(A)

DC

100 ms

10 ms

1 ms

100

µs

Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

6. Thermal characteristics

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance

from junction to

mounting base

Fig. 4

-

0.3

0.49

K/W

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single shot

0.2

0.1

0.05

0.02

1

1

(K/W)

δ = 0.5

T

P

t

T

δ =

Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration