100PS datasheet(6/13 Pages) PHILIPS

6 / 13 page

NXP Semiconductors

PSMN5R6-100PS

N-channel 100 V 5.6 mΩ standard level MOSFET in TO220

PSMN5R6-100PS

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Product data sheet

30 November 2012

6 / 13

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

trr

reverse recovery time

recovered charge

IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;

VDS = 50 V

182

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120

160

0.5

1.5

VDS (V)

(A)

4.5

5.5

VGS (V) = 4

Fig. 5. Output characteristics: drain current as a

function of drain-source voltage; typical values

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100

150

200

250

100

ID (A)

gfs

(S)

Fig. 6. Forward transconductance as a function of

drain current; typical values

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120

160

VGS (V)

(A)

Tj = 175 °C

Tj = 25 °C

Fig. 7. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

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VGS (V)

10- 4

10- 5

10- 2

10- 3

10- 1

(A)

10- 6

min

typ

max

Fig. 8. Sub-threshold drain current as a function of

gate-source voltage

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