NXP Semiconductors

PSMN5R6-100PS

N-channel 100 V 5.6 mΩ standard level MOSFET in TO220

PSMN5R6-100PS

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Product data sheet

30 November 2012

7 / 13

- 60

180

120

0

60

003aad280

2

3

1

4

5

(V)

0

max

typ

min

Fig. 9. Gate-source threshold voltage as a function of

junction temperature

003aad774

0

0.8

1.6

2.4

3.2

-60

0

60

120

180

a

Fig. 10. Normalized drain-source on-state resistance

factor as a function of junction temperature

003aad688

0

2

4

6

8

10

4

8

12

16

20

(mΩ)

Fig. 11. Drain-source on-state resistance as a function

of gate-source voltage; typical values

003aad689

2

4

6

8

10

0

20

40

60

80

100

5

15

8

5.5

10

6

(mΩ)

Fig. 12. Drain-source on-state resistance as a function

of drain current; typical values