100PS datasheet(5/13 Pages) PHILIPS

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NXP Semiconductors

PSMN5R6-100PS

N-channel 100 V 5.6 mΩ standard level MOSFET in TO220

PSMN5R6-100PS

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Product data sheet

30 November 2012

5 / 13

7. Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

ID = 250 µA; VGS = 0 V; Tj = 25 °C

100

V(BR)DSS

drain-source

breakdown voltage

ID = 250 µA; VGS = 0 V; Tj = -55 °C

VGS(th)

gate-source threshold

voltage

ID = 1 mA; VDS = VGS; Tj = 25 °C;

Fig. 8; Fig. 9

ID = 1 mA; VDS = VGS; Tj = 175 °C;

Fig. 9

VGSth

gate-source threshold

voltage

ID = 1 mA; VDS = VGS; Tj = -55 °C;

Fig. 9

4.6

VDS = 100 V; VGS = 0 V; Tj = 25 °C

0.02

µA

IDSS

drain leakage current

VDS = 100 V; VGS = 0 V; Tj = 175 °C

500

µA

VGS = -20 V; VDS = 0 V; Tj = 25 °C

100

IGSS

gate leakage current

VGS = 20 V; VDS = 0 V; Tj = 25 °C

100

VGS = 10 V; ID = 25 A; Tj = 175 °C;

Fig. 10

15.7

mΩ

RDSon

drain-source on-state

resistance

VGS = 10 V; ID = 25 A; Tj = 25 °C;

Fig. 11; Fig. 12

4.3

5.6

mΩ

gate resistance

f = 1 MHz

0.97

Dynamic characteristics

QG(tot)

total gate charge

141

QGS

gate-source charge

QGD

gate-drain charge

ID = 80 A; VDS = 50 V; VGS = 10 V;

Fig. 13; Fig. 14

Ciss

input capacitance

VDS = 50 V; VGS = 0 V; f = 1 MHz;

Tj = 25 °C; Fig. 15; Fig. 16

8061

Coss

output capacitance

VDS = 50 V; VGS = 0 V; f = 1 MHz;

Tj = 25 °C; Fig. 15

561

Crss

reverse transfer

capacitance

VDS = 50 V; VGS = 0 V; f = 1 MHz;

Tj = 25 °C; Fig. 15; Fig. 16

330

td(on)

turn-on delay time

rise time

td(off)

turn-off delay time

fall time

VDS = 50 V; RL = 0.6 Ω; VGS = 10 V;

RG(ext) = 1.5 Ω

Source-drain diode

VSD

source-drain voltage

IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 17

0.79

1.2

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