100PS datasheet(3/13 Pages) PHILIPS

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NXP Semiconductors

PSMN5R6-100PS

N-channel 100 V 5.6 mΩ standard level MOSFET in TO220

PSMN5R6-100PS

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Product data sheet

30 November 2012

3 / 13

Symbol

Parameter

Conditions

Min

Max

Unit

IDM

peak drain current

pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3

539

Ptot

total power dissipation

Tmb = 25 °C; Fig. 2

306

Tstg

storage temperature

-55

175

°C

junction temperature

-55

175

°C

Source-drain diode

source current

Tmb = 25 °C

[1]

100

ISM

peak source current

pulsed; tp ≤ 10 µs; Tmb = 25 °C

539

Avalanche Ruggedness

EDS(AL)S

non-repetitive drain-source

avalanche energy

VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;

Vsup ≤ 100 V; RGS = 50 Ω; unclamped

469

[1] Continious current limited by package.

003aad683

100

150

100

150

200

Tmb (°C)

(A)

(1)

Fig. 1. Continuous drain current as a function of

mounting base temperature

Tmb (°C)

200

150

100

03aa16

120

Pder

(%)

Fig. 2. Normalized total power dissipation as a

function of mounting base temperature

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