100PS datasheet(1/13 Pages) PHILIPS

Part #	100PS

Description	N-channel 100 V 5.6 m廓 standard level MOSFET in TO220

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Manufacturer	PHILIPS [NXP Semiconductors]

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PSMN5R6-100PS

N-channel 100 V 5.6 mΩ standard level MOSFET in TO220

30 November 2012

Product data sheet

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1. Product profile

1.1 General description

Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This

product is designed and qualified for use in a wide range of industrial, communications

and domestic equipment.

1.2 Features and benefits

• High efficiency due to low switching and conduction losses

• Improved dynamic avalanche performance

• Suitable for standard level gate drive sources

1.3 Applications

• DC-to-DC converters

• Load switching

• Motor control

• Server power supplies

1.4 Quick reference data

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDS

drain-source voltage

Tj ≥ 25 °C; Tj ≤ 175 °C

-

100

V

ID

drain current

Tmb = 25 °C; VGS = 10 V; Fig. 1

[1]

-

100

A

Ptot

total power dissipation Tmb = 25 °C; Fig. 2

-

306

W

Static characteristics

RDSon

drain-source on-state

resistance

VGS = 10 V; ID = 25 A; Tj = 25 °C;

Fig. 11; Fig. 12

-

4.3

5.6

mΩ

Dynamic characteristics

QGD

gate-drain charge

-

43

-

nC

QG(tot)

total gate charge

VGS = 10 V; ID = 80 A; VDS = 50 V;

Fig. 13; Fig. 14

-

141

-

nC

Avalanche Ruggedness

EDS(AL)S

non-repetitive drain-

source avalanche

energy

VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;

Vsup ≤ 100 V; RGS = 50 Ω; unclamped

-

469

mJ

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