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R5975D Datasheet(PDF) 32 Page - STMicroelectronics |
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R5975D Datasheet(HTML) 32 Page - STMicroelectronics |
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32 / 47 page ![]() Application information R5975D 32/47 DocID026878 Rev 1 8.4 RMS current of the embedded power MOSFET As the R5975D embeds the high side switch, the internal power dissipation is sometimes the bottleneck for the output current capability (refer to Section 8.3 for the estimation of the operating temperature). Nevertheless, as mentioned in Description on page 1, the device can manage a continuous output current of 3 A in most of the application conditions. However, the rated maximum RMS current of the power elements is 2 A, where: Equation 31 and the real duty cycle D: Equation 32 Fixing the limit of 2 A for IRMS HS, the maximum output current can be derived, as illustrated in Figure 18. Figure 18. Maximum continuous output current vs. duty cycle 8.5 Short-circuit protection In overcurrent protection mode, when the peak current reaches the current limit, the device reduces the TON down to its minimum value (approximately 250 nsec) and the switching frequency to approximately one third of its nominal value even when synchronized to an external signal (see Section 5.4: Current protection on page 14). In these conditions, the duty cycle is strongly reduced and, in most applications, this is enough to limit the current to ILIM. In any event, in case of heavy short-circuit at the output (VO = 0 V) and depending on the application conditions (VCC value and parasitic effect of external components), the current peak could reach values higher than ILIM. IRMS HS ILOAD D = D VOUT RDS (on) LS DCR + I LOAD + VIN RDS (on) LS RDS (on) HS – I LOAD + ------------------------------------------------------------------------------------------------------ = |
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