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ADG5243F Datasheet(PDF) 4 Page - Analog Devices |
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ADG5243F Datasheet(HTML) 4 Page - Analog Devices |
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4 / 30 page  ADG5243F Data Sheet Rev. 0 | Page 4 of 30 Parameter +25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments DYNAMIC CHARACTERISTICS1 Transition Time, tTRANSITION 160 ns typ RL = 1 kΩ, CL = 35 pF 195 210 215 ns max VS = 10 V, see Figure 46 tON (EN) 165 ns typ RL = 1 kΩ, CL = 35 pF 205 220 230 ns max VS = 10 V, see Figure 45 tOFF (EN) 70 ns typ RL = 1 kΩ, CL = 35 pF 90 110 110 ns max VS = 10 V, see Figure 45 Break-Before-Make Time Delay, tD 115 ns typ RL = 1 kΩ, CL = 35 pF 85 ns min VS = 10 V, see Figure 44 Overvoltage Response Time, tRESPONSE 90 ns typ RL = 1 kΩ, CL = 5 pF, see Figure 39 115 130 130 ns max Overvoltage Recovery Time, tRECOVERY 745 ns typ RL = 1 kΩ, CL = 5 pF, see Figure 40 945 965 970 ns max Interrupt Flag Response Time, tDIGRESP 90 ns typ CL = 12 pF, see Figure 41 Interrupt Flag Recovery Time, tDIGREC 65 µs typ CL = 12 pF, see Figure 42 900 ns typ CL = 12 pF, RPULLUP = 1 kΩ, see Figure 43 Charge Injection, QINJ −0.8 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF, see Figure 47 Off Isolation −74 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 36 Channel-to-Channel Crosstalk −83 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 38 Total Harmonic Distortion Plus Noise, THD + N 0.005 % typ RL = 10 kΩ, VS = 15 V p-p, f = 20 Hz to 20 kHz, see Figure 35 −3 dB Bandwidth 350 MHz typ RL = 50 Ω, CL = 5 pF, see Figure 37 Insertion Loss 10.5 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 37 CS (Off) 4 pF typ VS = 0 V, f = 1 MHz CD (Off) 4 pF typ VS = 0 V, f = 1 MHz CD (On), CS (On) 10 pF typ VS = 0 V, f = 1 MHz POWER REQUIREMENTS VDD = POSFV = +16.5 V, VSS = NEGFV = −16.5 V, GND = 0 V, digital inputs = 0 V, 5 V, or VDD Normal Mode IDD 1.3 mA typ IPOSFV 0.15 mA typ IDD + IPOSFV 2 2.1 mA max IGND 0.75 mA typ 1.25 1.4 mA max ISS 0.65 mA typ INEGFV 0.2 mA typ ISS + INEGFV 0.95 1.0 mA max Fault Mode VS = ±55 V, all channels in fault IDD 1.4 mA typ IPOSFV 0.2 mA typ IDD + IPOSFV 2.5 2.8 mA max IGND 0.9 mA typ 1.8 1.9 mA max ISS 0.55 mA typ INEGFV 0.2 mA typ ISS + INEGFV 1.0 1.1 mA max VDD/VSS ±5 V min GND = 0 V ±22 V max GND = 0 V 1 Guaranteed by design; not subject to production test. |
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