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ADG5243F Datasheet(PDF) 10 Page - Analog Devices |
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ADG5243F Datasheet(HTML) 10 Page - Analog Devices |
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10 / 30 page  ADG5243F Data Sheet Rev. 0 | Page 10 of 30 Parameter +25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments DYNAMIC CHARACTERISTICS1 Transition Time, tTRANSITION 155 ns typ RL = 1 kΩ, CL = 35 pF 190 205 210 ns max VS = 18 V, see Figure 46 tON (EN) 160 ns typ RL = 1 kΩ, CL = 35 pF 195 210 220 ns max VS = 18 V, see Figure 45 tOFF (EN) 95 ns typ RL = 1 kΩ, CL = 35 pF 115 125 130 ns max VS = 18 V, see Figure 45 Break-Before-Make Time Delay, tD 100 ns typ RL = 1 kΩ, CL = 35 pF 70 ns min VS = 18 V, see Figure 44 Overvoltage Response Time, tRESPONSE 60 ns typ RL = 1 kΩ, CL = 5 pF, see Figure 39 80 85 85 ns max Overvoltage Recovery Time, tRECOVERY 1400 ns typ RL = 1 kΩ, CL = 5 pF, see Figure 40 1900 2100 2200 ns max Interrupt Flag Response Time, tDIGRESP 85 ns typ CL = 12 pF, see Figure 41 Interrupt Flag Recovery Time, tDIGREC 65 µs typ CL = 12 pF, see Figure 42 1600 ns typ CL = 12 pF, RPULLUP = 1 kΩ, see Figure 43 Charge Injection, QINJ −1.4 pC typ VS = 18 V, RS = 0 Ω, CL = 1 nF, see Figure 47 Off Isolation −74 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 36 Channel-to-Channel Crosstalk −85 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 38 Total Harmonic Distortion Plus Noise, THD + N 0.007 % typ RL = 10 kΩ, VS = 18 V p-p, f = 20 Hz to 20 kHz, see Figure 35 −3 dB Bandwidth 355 MHz typ RL = 50 Ω, CL = 5 pF, see Figure 37 Insertion Loss 10.5 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 37 CS (Off) 4 pF typ VS = 18 V, f = 1 MHz CD (Off) 4 pF typ VS = 18 V, f = 1 MHz CD (On), CS (On) 9 pF typ VS = 18 V, f = 1 MHz POWER REQUIREMENTS VDD = POSFV = 39.6 V, VSS = NEGFV = 0 V, GND = 0 V, digital inputs = 0 V, 5 V, or VDD Normal Mode IDD 1.3 mA typ IPOSFV 0.15 mA typ IDD + IPOSFV 2 2.1 mA max IGND 0.75 mA typ 1.4 1.5 mA max ISS 0.55 mA typ INEGFV 0.2 mA typ ISS + INEGFV 0.95 1.0 mA max Fault Mode VS = +55 V, −40 V, all channels in fault IDD 1.4 mA typ IPOSFV 0.2 mA typ IDD + IPOSFV 2.5 2.8 mA max IGND 0.9 mA typ 1.8 1.9 mA max ISS 0.55 mA typ INEGFV 0.2 mA typ ISS + INEGFV 1.0 1.1 mA max VDD/VSS 8 V min GND = 0 V 44 V max GND = 0 V 1 Guaranteed by design; not subject to production test. |
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