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S-807 Datasheet(PDF) 22 Page - Seiko Instruments Inc

Part # S-807
Description  HIGH-PRECISION VOLTAGE DETECTOR
PDF  42 Pages
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Manufacturer  SII [Seiko Instruments Inc]
Direct Link  http://www.sii.co.jp
Logo SII - Seiko Instruments Inc

S-807 Datasheet(HTML) 22 Page - Seiko Instruments Inc

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HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
Seiko Instruments Inc.
21
43. S-80750AL-EE-X, S-80750AN/AN-JE-X
S-80750SL-EE-X, S-80750SN-JE-X (Detection voltage : 4.880 to 5.120 V)
(Unless otherwise specified : Ta=25
°C)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Test
circuit
Detection voltage
-VDET
4.880
5.000
5.120
V
1
Hysteresis width
VHYS
-VDET
×0.02
-VDET
×0.05
-VDET
×0.08
V1
Current consumption
ISS
VDD = 6.0 V
1.0
3.0
µA2
Operating voltage
VDD
1.0
15.0
V
1
Output current
IOUT
Nch
VDS = 0.5 V
VDD = 1.2 V
0.23
0.50
mA
3
VDD = 2.4 V
1.60
3.70
VDD = 3.6 V
3.18
7.00
Pch
(CMOS
output)
VDS = 0.5 V
VDD = 6.0 V
0.46
0.75
4
Temperature
characteristic of -
VDET
Ta=-30
°C to 80°C
±0.63
mV/
°C
44. S-80751AL, S-80751AN/AN-JF-X
S-80751SL-EF-X, S-80751SN-JF-X (Detection voltage : 4.977 to 5.223 V)
(Unless otherwise specified : Ta=25
°C)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Test
circuit
Detection voltage
-VDET
4.977
5.100
5.223
V
1
Hysteresis width
VHYS
-VDET
×0.02
-VDET
×0.05
-VDET
×0.08
V1
Current consumption
ISS
VDD = 6.0 V
1.0
3.0
µA2
Operating voltage
VDD
1.0
15.0
V
1
Output current
IOUT
Nch
VDS = 0.5 V
VDD = 1.2 V
0.23
0.50
mA
3
VDD = 2.4 V
1.60
3.70
VDD = 3.6 V
3.18
7.00
Pch
(CMOS
output)
VDS = 0.5 V
VDD = 6.0 V
0.46
0.75
4
Temperature
characteristic of -
VDET
Ta=-30
°C to 80°C
±0.64
mV/
°C
45. S-80752AL-EG-T1, S-80752AN-JE-T1,
S-80752SL-EG-T1 (Detection voltage : 5.075 to 5.325 V)
(Unless otherwise specified : Ta=25
°C)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Test
circuit
Detection voltage
-VDET
5.075
5.200
5.325
V
1
Hysteresis width
VHYS
-VDET
×0.02
-VDET
×0.05
-VDET
×0.08
V1
Current consumption
ISS
VDD = 6.0 V
1.0
3.0
µA2
Operating voltage
VDD
1.0
15.0
V
1
Output current
IOUT
Nch
VDS = 0.5 V
VDD = 1.2 V
0.23
0.50
mA
3
VDD = 2.4 V
1.60
3.70
VDD = 3.6 V
3.18
7.00
Pch
(CMOS
output)
VDS = 0.5 V
VDD = 6.0 V
0.46
0.75
4
Temperature
characteristic of -
VDET
Ta=-30
°C to 80°C
±0.65
mV/
°C
∆-V
DET
∆Ta
∆-V
DET
∆Ta
∆-V
DET
∆Ta



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