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S-807 Datasheet(PDF) 23 Page - Seiko Instruments Inc |
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S-807 Datasheet(HTML) 23 Page - Seiko Instruments Inc |
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23 / 42 page ![]() HIGH-PRECISION VOLTAGE DETECTOR S-807 Series 22 Seiko Instruments Inc. 46. S-80753AN (Detection voltage : 5.172 to 5.428 V) (Unless otherwise specified : Ta=25 °C) Parameter Symbol Conditions Min. Typ. Max. Unit Test circuit Detection voltage -VDET 5.172 5.300 5.428 V 1 Hysteresis width VHYS -VDET ×0.02 -VDET ×0.05 -VDET ×0.08 V1 Current consumption ISS VDD = 6.0 V 1.0 3.0 µA2 Operating voltage VDD 1.0 15.0 V 1 Output current IOUT Nch VDS = 0.5 V VDD = 1.2 V 0.23 0.50 mA 3 VDD = 2.4 V 1.60 3.70 VDD = 3.6 V 3.18 7.00 Pch (CMOS output) VDS = 0.5 V VDD = 6.0 V 0.46 0.75 4 Temperature characteristic of - VDET Ta=-30 °C to 80°C ±0.66 mV/ °C 47. S-80755AL-EK-X (Detection voltage : 5.368 to 5.632 V) (Unless otherwise specified : Ta=25 °C) Parameter Symbol Conditions Min. Typ. Max. Unit Test circuit Detection voltage -VDET 5.368 5.500 5.632 V 1 Hysteresis width VHYS -VDET ×0.02 -VDET ×0.05 -VDET ×0.08 V1 Current consumption ISS VDD = 6.0 V 1.0 3.0 µA2 Operating voltage VDD 1.0 15.0 V 1 Output current IOUT Nch VDS = 0.5 V VDD = 1.2 V 0.23 0.50 mA 3 VDD = 2.4 V 1.60 3.70 VDD = 3.6 V 3.18 7.00 Pch (CMOS output) VDS = 0.5 V VDD = 6.0 V 0.46 0.75 4 Temperature characteristic of - VDET Ta=-30 °C to 80°C ±0.69 mV/ °C 48. S-80761SL-ER-X (Detection voltage : 5.953 to 6.247 V) (Unless otherwise specified : Ta=25 °C) Parameter Symbol Conditions Min. Typ. Max. Unit Test circuit Detection voltage -VDET 5.953 6.100 6.247 V 1 Hysteresis width VHYS -VDET ×0.02 -VDET ×0.05 -VDET ×0.08 V1 Current consumption ISS VDD = 7.5 V 1.9 3.6 µA2 Operating voltage VDD 1.0 15.0 V 1 Output current IOUT Nch VDS = 0.5 V VDD = 1.2 V 0.23 0.50 mA 3 VDD = 2.4 V 1.60 3.70 VDD = 3.6 V 3.18 7.00 VDD = 4.8 V 4.13 8.56 Pch (CMOS output) VDS = 0.5 V VDD = 8.4 V 0.59 0.96 4 Temperature characteristic of - VDET Ta=-30 °C to 80°C ±0.78 mV/ °C ∆-V DET ∆Ta ∆-V DET ∆Ta ∆-V DET ∆Ta |
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