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S-807 Datasheet(PDF) 18 Page - Seiko Instruments Inc |
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S-807 Datasheet(HTML) 18 Page - Seiko Instruments Inc |
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18 / 42 page ![]() HIGH-PRECISION VOLTAGE DETECTOR S-807 Series Seiko Instruments Inc. 17 31. S-80740AH/AH-B4-X (Detection voltage : 3.904 to 4.096 V) (Unless otherwise specified : Ta=25 °C) Parameter Symbol Conditions Min. Typ. Max. Unit Test circuit Detection voltage -VDET 3.904 4.000 4.096 V 1 Hysteresis width VHYS -VDET ×0.02 -VDET ×0.05 -VDET ×0.08 V1 Current consumption ISS VDD = 6.0 V 1.0 3.0 µA2 Operating voltage VDD 1.0 15.0 V 1 Output current IOUT Pch VDS = 0.5 V VDD = 1.2 V 0.03 0.09 mA 4 VDD = 2.4 V 0.15 0.30 Nch VDS = 0.5 V VDD = 6.0 V 4.73 9.60 3 Temperature characteristic of - VDET Ta=-30 °C to 80°C ±0.5 mV/ °C 32. S-80741AL/AL-A5-X, S-80741AN/AN-D5-X (Detection voltage : 4.001 to 4.199 V) (Unless otherwise specified : Ta=25 °C) Parameter Symbol Conditions Min. Typ. Max. Unit Test circuit Detection voltage -VDET 4.001 4.100 4.199 V 1 Hysteresis width VHYS -VDET ×0.02 -VDET ×0.05 -VDET ×0.08 V1 Current consumption ISS VDD = 6.0 V 1.0 3.0 µA2 Operating voltage VDD 1.0 15.0 V 1 Output current IOUT Nch VDS = 0.5 V VDD = 1.2 V 0.23 0.50 mA 3 VDD = 2.4 V 1.60 3.70 VDD = 3.6 V 3.18 7.00 Pch (CMOS output) VDS = 0.5 V VDD = 6.0 V 0.46 0.75 4 Temperature characteristic of - VDET Ta=-30 °C to 80°C ±0.51 mV/ °C 33. S-80742AL/AL-A6-X, S-80742AN/AN-D6-X S-80742SL-A6-X, S-80742SN-D6-X (Detection voltage : 4.099 to 4.301 V) (Unless otherwise specified : Ta=25 °C) Parameter Symbol Conditions Min. Typ. Max. Unit Test circuit Detection voltage -VDET 4.099 4.200 4.301 V 1 Hysteresis width VHYS -VDET ×0.02 -VDET ×0.05 -VDET ×0.08 V1 Current consumption ISS VDD = 6.0 V 1.0 3.0 µA2 Operating voltage VDD 1.0 15.0 V 1 Output current IOUT Nch VDS = 0.5 V VDD = 1.2 V 0.23 0.50 mA 3 VDD = 2.4 V 1.60 3.70 VDD = 3.6 V 3.18 7.00 Pch (CMOS output) VDS = 0.5 V VDD = 6.0 V 0.46 0.75 4 Temperature characteristic of - VDET Ta=-30 °C to 80°C ±0.53 mV/ °C ∆-V DET ∆Ta ∆-V DET ∆Ta ∆-V DET ∆Ta |
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