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S-807 Datasheet(PDF) 20 Page - Seiko Instruments Inc |
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S-807 Datasheet(HTML) 20 Page - Seiko Instruments Inc |
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20 / 42 page ![]() HIGH-PRECISION VOLTAGE DETECTOR S-807 Series Seiko Instruments Inc. 19 37. S-80745AL/AL-A9-X, S-80745AN/AN-D9-X S-80745SL-A9-X, S-80745SN-D9-X (Detection voltage : 4.392 to 4.608 V) (Unless otherwise specified : Ta=25 °C) Parameter Symbol Conditions Min. Typ. Max. Unit Test circuit Detection voltage -VDET 4.392 4.50 4.608 V 1 Hysteresis width VHYS -VDET ×0.02 -VDET ×0.05 -VDET ×0.08 V1 Current consumption ISS VDD = 6.0 V 1.0 3.0 µA2 Operating voltage VDD 1.0 15.0 V 1 Output current IOUT Nch VDS = 0.5 V VDD = 1.2 V 0.23 0.50 mA 3 VDD = 2.4 V 1.60 3.70 VDD = 3.6 V 3.18 7.00 Pch (CMOS output) VDS = 0.5 V VDD = 6.0 V 0.46 0.75 4 Temperature characteristic of - VDET Ta=-30 °C to 80°C ±0.56 mV/ °C 38. S-80745AH-B9-X (Detection voltage : 4.392 to 4.608 V) (Unless otherwise specified : Ta=25 °C) Parameter Symbol Conditions Min. Typ. Max. Unit Test circuit Detection voltage -VDET 4.392 4.500 4.608 V 1 Hysteresis width VHYS -VDET ×0.02 -VDET ×0.05 -VDET ×0.08 V1 Current consumption ISS VDD = 6.0 V 1.0 3.0 µA2 Operating voltage VDD 1.0 15.0 V 1 Output current IOUT Pch VDS = 0.5 V VDD = 1.2 V 0.03 0.09 mA 4 VDD = 2.4 V 0.15 0.30 Nch VDS = 0.5 V VDD = 6.0 V 4.73 9.60 3 Temperature characteristic of - VDET Ta=-30 °C to 80°C ±0.56 mV/ °C 39. S-80746AL/AL-EA-X, S-80746AN-JA-X (Detection voltage : 4.489 to 4.711 V) (Unless otherwise specified : Ta=25 °C) Parameter Symbol Conditions Min. Typ. Max. Unit Test circuit Detection voltage -VDET 4.489 4.600 4.711 V 1 Hysteresis width VHYS -VDET ×0.02 -VDET ×0.05 -VDET ×0.08 V1 Current consumption ISS VDD = 6.0 V 1.0 3.0 µA2 Operating voltage VDD 1.0 15.0 V 1 Output current IOUT Nch VDS = 0.5 V VDD = 1.2 V 0.23 0.50 mA 3 VDD = 2.4 V 1.60 3.70 VDD = 3.6 V 3.18 7.00 Pch (CMOS output) VDS = 0.5 V VDD = 6.0 V 0.46 0.75 4 Temperature characteristic of - VDET Ta=-30 °C to 80°C ±0.58 mV/ °C ∆-V DET ∆Ta ∆-V DET ∆Ta ∆-V DET ∆Ta |
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