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S-807 Datasheet(PDF) 16 Page - Seiko Instruments Inc |
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S-807 Datasheet(HTML) 16 Page - Seiko Instruments Inc |
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16 / 42 page ![]() HIGH-PRECISION VOLTAGE DETECTOR S-807 Series Seiko Instruments Inc. 15 25. S-80735AL/AL-AZ-X, S-80735AN/AN-DZ-X S-80735SL-AZ-X, S-80735SN-DZ-X (Detection voltage : 3.416 to 3.584 V) (Unless otherwise specified : Ta=25 °C) Parameter Symbol Conditions Min. Typ. Max. Unit Test circuit Detection voltage -VDET 3.416 3.500 3.584 V 1 Hysteresis width VHYS -VDET ×0.02 -VDET ×0.05 -VDET ×0.08 V1 Current consumption ISS VDD = 4.5 V 1.0 3.0 µA2 Operating voltage VDD 1.0 15.0 V 1 Output current IOUT Nch VDS = 0.5 V VDD = 1.2 V 0.23 0.50 mA 3 VDD = 2.4 V 1.60 3.70 Pch (CMOS output) VDS = 0.5 V VDD = 4.8 V 0.36 0.62 4 Temperature characteristic of - VDET Ta=-30 °C to 80°C ±0.44 mV/ °C 26. S-80736AL-A0-X, S-80736AN/AN-D0-X (Detection voltage : 3.513 to 3.687 V) (Unless otherwise specified : Ta=25 °C) Parameter Symbol Conditions Min. Typ. Max. Unit Test circuit Detection voltage -VDET 3.513 3.600 3.687 V 1 Hysteresis width VHYS -VDET ×0.02 -VDET ×0.05 -VDET ×0.08 V1 Current consumption ISS VDD = 4.5 V 1.0 3.0 µA2 Operating voltage VDD 1.0 15.0 V 1 Output current IOUT Nch VDS = 0.5 V VDD = 1.2 V 0.23 0.50 mA 3 VDD = 2.4 V 1.60 3.70 Pch (CMOS output) VDS = 0.5 V VDD = 4.8 V 0.36 0.62 4 Temperature characteristic of - VDET Ta=-30 °C to 80°C ±0.45 mV/ °C 27. S-80737AL/AL-A1-X, S-80737AN/AN-D1-X (Detection voltage : 3.611 to 3.789 V) (Unless otherwise specified : Ta=25 °C) Parameter Symbol Conditions Min. Typ. Max. Unit Test circuit Detection voltage -VDET 3.611 3.700 3.789 V 1 Hysteresis width VHYS -VDET ×0.02 -VDET ×0.05 -VDET ×0.08 V1 Current consumption ISS VDD = 6.0 V 1.0 3.0 µA2 Operating voltage VDD 1.0 15.0 V 1 Output current IOUT Nch VDS = 0.5 V VDD = 1.2 V 0.23 0.50 mA 3 VDD = 2.4 V 1.60 3.70 Pch (CMOS output) VDS = 0.5 V VDD = 4.8 V 0.36 0.62 4 Temperature characteristic of - VDET Ta=-30 °C to 80°C ±0.46 mV/ °C ∆-V DET ∆Ta ∆-V DET ∆Ta ∆-V DET ∆Ta |
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