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S-807 Datasheet(PDF) 17 Page - Seiko Instruments Inc

Part # S-807
Description  HIGH-PRECISION VOLTAGE DETECTOR
PDF  42 Pages
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Manufacturer  SII [Seiko Instruments Inc]
Direct Link  http://www.sii.co.jp
Logo SII - Seiko Instruments Inc

S-807 Datasheet(HTML) 17 Page - Seiko Instruments Inc

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HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
16
Seiko Instruments Inc.
28. S-80738AL/AL-A2-X, S-80738AN/AN-D2-X (Detection voltage : 3.708 to 3.892 V)
(Unless otherwise specified : Ta=25
°C)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Test
circuit
Detection voltage
-VDET
3.708
3.800
3.892
V
1
Hysteresis width
VHYS
-VDET
×0.02
-VDET
×0.05
-VDET
×0.08
V1
Current consumption
ISS
VDD = 6.0 V
1.0
3.0
µA2
Operating voltage
VDD
1.0
15.0
V
1
Output current
IOUT
Nch
VDS = 0.5 V
VDD = 1.2 V
0.23
0.50
mA
3
VDD = 2.4 V
1.60
3.70
Pch
(CMOS
output)
VDS = 0.5 V
VDD = 4.8 V
0.36
0.62
4
Temperature
characteristic of -
VDET
Ta=-30
°C to 80°C
±0.48
mV/
°C
29. S-80739AL/AL-A3-X, S-80739AN/AN-D3-X (Detection voltage : 3.806 to 3.994 V)
(Unless otherwise specified : Ta=25
°C)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Test
circuit
Detection voltage
-VDET
3.806
3.900
3.994
V
1
Hysteresis width
VHYS
-VDET
×0.02
-VDET
×0.05
-VDET
×0.08
V1
Current consumption
ISS
VDD = 6.0 V
1.0
3.0
µA2
Operating voltage
VDD
1.0
15.0
V
1
Output current
IOUT
Nch
VDS = 0.5 V
VDD = 1.2 V
0.23
0.50
mA
3
VDD = 2.4 V
1.60
3.70
Pch
(CMOS
output)
VDS = 0.5 V
VDD = 4.8 V
0.36
0.62
4
Temperature
characteristic of -
VDET
Ta=-30
°C to 80°C
±0.49
mV/
°C
30. S-80740AL/AL-A4-X, S-80740AN/AN-D4-X
S-80740SL-A4-X, S-80740SN-D4-X (Detection voltage : 3.904 to 4.096 V)
(Unless otherwise specified : Ta=25
°C)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Test
circuit
Detection voltage
-VDET
3.904
4.00
4.096
V
1
Hysteresis width
VHYS
-VDET
×0.02
-VDET
×0.05
-VDET
×0.08
V1
Current consumption
ISS
VDD = 6.0 V
1.0
3.0
µA2
Operating voltage
VDD
1.0
15.0
V
1
Output current
IOUT
Nch
VDS = 0.5 V
VDD = 1.2 V
0.23
0.50
mA
3
VDD = 2.4 V
1.60
3.70
VDD = 3.6 V
3.18
7.00
Pch
(CMOS
output)
VDS = 0.5 V
VDD = 6.0 V
0.46
0.75
4
Temperature
characteristic of -
VDET
Ta=-30
°C to 80°C
±0.5
mV/
°C
∆-V
DET
∆Ta
∆-V
DET
∆Ta
∆-V
DET
∆Ta



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