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SA8028 Datasheet(PDF) 10 Page - NXP Semiconductors |
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SA8028 Datasheet(HTML) 10 Page - NXP Semiconductors |
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10 / 28 page ![]() Philips Semiconductors Product data SA8028 2.5 GHz sigma delta fractional-N / 760 MHz IF integer frequency synthesizers 2002 Feb 22 10 1.5 RF and IF Charge Pumps The RF phase detector drives the charge pumps on the PHP and PHI pins, while the IF phase detector drives the charge pump on the PHA pin. Both the RF and IF charge pump current values are determined by the current generated at the RSET pin1. The current gain can be further programmed by the CP0, CP1 bits in the C-word, as seen in Table 1. Table 1. RF and IF charge pump currents CP1 2 CP0 IPHA IPHP IPHP–SU 3 IPHI 0 0 1.5xlSET 3xISET 15xlSET 36xlSET 0 1 0.5xlSET 1xlSET 5xlSET 12xlSET 1 0 1.5xlSET 3xlSET 15xlSET 0 1 1 0.5xlSET 1xlSET 5xlSET 0 NOTES 1. ISET = VSET/RSET: bias current for charge pumps. 2. CP1 = 1 is used to disable the PHI pump. 3. IPHP–SU is the total current at pin PHP during speed up condition. 1.6 Charge Pumps Speed-up Mode The RF charge pumps will enter speed-up mode when STROBE goes high after A-word has been sent. They will exit speed-up mode on the next falling edge of STROBE. There is no speed-up mode for the IF charge pump. The charge pump, by default, will automatically go into speed-up mode (which can deliver up to 15*ISET for PHP_SU, and 36*ISET for PHI), based on the strobe pulse width following the A-word to reduce switching speed for large tuning voltage steps (i.e., large frequency steps). Figure 7 shows the recommended passive loop filter configuration. Note: This charge pump architecture eliminates the need for added active switches and reduces external component count. Furthermore, the programmable charge pump gains provide some programmability to the loop filter bandwidth. The duration of speed-up mode is determined by the strobe pulse that follows the A-word. Recommended optimal strobe width is equal to the total loop filter capacitance charge time from VCO control voltage level 1 to VCO control voltage level 2. The strobe width must not exceed this charge time. An external data processing unit controls the width of the strobe pulse (e.g., × number of clock cycles). In addition, charge pumps will stay in speed-up mode continuously while Tspu = 1 (in D-word <D15>). The speed-up mode can also be disabled by programming Tdis-spu = 1 (in D-word <D16>). SR02356 VCO C3 C2 R2 C1 R1 PHP[PHP–SU] PHI Figure 7. Typical passive 3-pole loop filter. 1.7 Lock Detect The output LOCK maintains a logic ‘1’ when the IF phase detector (AND/ORed) with the RF phase detector indicates a lock condition. The lock condition for the RF and IF synthesizers is defined as a phase difference of less than "1 period of the frequency at the input REFin+, REFin–. One counter can fulfill the lock condition when the other counter is powered down. Out of lock (logic ‘0’) is indicated when both counters are powered down. 1.8 Power-down mode With power applied to the chip, power-down mode can be entered either by hardware (external signal on pin PON) or by software (by programming the PD = Power Down bits (<B10, B9>) in the B-word). The PON signal is exclusively ORed with the PD bits. If PON = 0, then the part is powered up when PD = 1 (<B10, B9>). PON can be used to invert the polarity of the software bits PD. Table 9 of section 2.4.2 illustrates how power-down mode can be implemented. During power-down mode the 3-wire bus remains active and programming-words may be pre-loaded before switching to power-up mode. If the chip is programmed while in power-down mode, the RF divider ratio NRF is internally presented to the RF divider on the next falling edge of STROBE after STROBE has gone high at the end of the A-word. Power-down mode does not reset the sigma-delta modulator., i.e., power-down mode preserves the state of the sigma-delta modulator (as long as power is applied to the chip). To take advantage of the register pre-loading capability while the device is in power-down mode, the B-word needs to be sent a second time (i.e., again, after the A-word), with the PD (<B10, B9>) bits now programmed for power-up. If power-up mode is to be controlled by hardware, the PON signal must be toggled only after the A-word has been sent and STROBE has gone high and then low. When the synthesizer is reactivated after power-down mode, the IF and reference dividers are synchronized to avoid random phase errors on power-up. There is no power-up synchronization between the RF divider and the reference clock. After power-up, there is a delay of four edges (i.e. 1.5 cycles) of the output clock of the reference divider before the RF phase detector is activated. That means the reference divider must be powered up for the RF phase detector to become active. When initially applying or reapplying power to the chip, and internal power-up reset pulse is generated which sets the programming-words to their default values and also resets the sigma-delta modulator to its “all-0” state. It is also recommended that the D-word be manually reset to all zeros, following initial power-up, to avoid unknown states. |
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