LP8555 datasheet(5/64 Pages) TI1

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LP8555

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SNVS857 – FEBRUARY 2014

7.3 Recommended Operating Conditions

(1) (2)

Over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

VDD – Voltage on VDD

2.7

VLDO – Voltage on VLDO

2.7

5.5

V (EN/VDDIO) – Supply voltage for digital I/O

1.7

5.5

V (PWM/INT, FSET/SDA, ISET/SCL) – Voltage on logic terminals

5.5

V (SW_A, SW_B, LEDxy, FB_x)

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device a these or any other conditions beyond those indicated under Recommended Operating

Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltages are with respect to the potential at the GND terminals.

7.4 Thermal Information

Over operating free-air temperature range (unless otherwise noted)

DSBGA

THERMAL METRIC(1)

UNIT

(36 TERMINALS)

θJA

Junction-to-ambient thermal resistance (

θJA)

(2)

76.2

°C/W

θJC

Junction-to-case (top) thermal resistance

0.3

°C/W

θJB

Junction-to-board thermal resistance

16.3

°C/W

ΨJT

Junction-to-top characterization parameter

1.8

°C/W

ΨJB

Junction-to-board characterization parameter

16.3

°C/W

(1)

For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

(2)

Junction-to-ambient thermal resistance is highly application and board-layout dependent. In applications where high maximum power

dissipation exists, special care must be paid to thermal dissipation issues in board design.

7.5 Electrical Characteristics

(1) (2)

Limits apply over the full ambient temperature range –40°C

≤ TA ≤ 85°C. Unless otherwise specified: VDD = 3.6 V, EN/VDDIO

= 1.8 V, L1 = L2 = 6.8 µH, CIN_A = CIN_B = 10 µF, COUT_A = COUT_B = 10 µF, CVLDO = 10 µF, CVDD = 1 µF.

(3)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

IIN

Shutdown supply current

EN = L and PWM/INT = L

µA

Standby supply current

EN = H and PWM/INT = L, ON bit =

EN = H, ON bit = 1, no current going

4.2

Normal mode supply current

through LED outputs

fOSC

Internal oscillator frequency

-7%

accuracy

TTSD

Thermal shutdown threshold

150

°C

TTSD_hyst

Thermal shutdown hysteresis

tSTART-UP

Start-up time(4)

BOOST CONVERTER (Applies for both boost converters)

VBST_MIN

Minimum output voltage

VBST_MAX

Maximum output voltage

VMAX = 00

VMAX = 01

VMAX = 10

VMAX = 11

IMAX

SW FET current limit

2.7

3.1

3.5

RNMOS

NMOS switch-ON resistance

ISW = 0.5 A

0.16

ILOAD

Continuous load current

VBATT = 3 V, VOUT = 26.6 V.

180

Typical application.

(1)

All voltages are with respect to the potential at the GND terminals.

(2)

Min and Max limits are specified by design, test, or statistical analysis.

(3)

Low-ESR Surface-Mount Ceramic Capacitors (MLCCs) used in setting electrical characteristics

(4)

Start-up time is measured from the moment the ON bit is set high to the moment when backlight is enabled.

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