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VN7140AS Datasheet(PDF) 30 Page - STMicroelectronics

Part # VN7140AS
Description  High-side driver with MultiSense analog feedback for automotive applications
PDF  55 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

VN7140AS Datasheet(HTML) 30 Page - STMicroelectronics

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Application information
VN7140AJ, VN7140AS
30/55
DocID027401 Rev 3
4.1.1
Diode (DGND) in the ground line
A resistor (typ. RGND = 4.7
kΩ) should be inserted in parallel to DGND if the device drives an
inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this
case, the presence of the
ground network produces a shift (≈600 mV) in the input threshold
and in the status output values if the microprocessor ground is not common to the device
ground. This shift does not vary if more than one HSD shares the same diode/resistor
network.
4.2
Immunity against transient electrical disturbances
The immunity of the device against transient electrical emissions, conducted along the
supply lines and injected into the VCC pin, is tested in accordance with ISO7637-2:2011 (E)
and ISO 16750-2:2010.
The related function performance status classification is shown in Table 12: "ISO 7637-2 -
electrical transient conduction along supply line".
Test pulses are applied directly to DUT (Device Under Test) both in ON and OFF-state and
in accordance to ISO 7637-2:2011(E), chapter 4. The DUT is intended as the present
device only, without components and accessed through VCC and GND terminals.
Status II is defined in ISO 7637-1 Function Performance Status Classification (FPSC) as
follows: “The function does not perform as designed during the test but returns
automatically to normal operation after the test”.
Table 12: ISO 7637-2 - electrical transient conduction along supply line
Test
Pulse
2011(E)
Test pulse severity
level with Status II
functional performance
status
Minimum
number of
pulses or test
time
Burst cycle /
pulse
repetition time
Pulse duration and
pulse generator
internal impedance
Level
US(1)
min
max
1
III
-112 V
500 pulses
0.5 s
2 ms, 10 Ω
2a
III
+55 V
500 pulses
0.2 s
5 s
50 µs, 2 Ω
3a
IV
-220 V
1h
90 ms
100
ms
0.1 µs, 50 Ω
3b
IV
+150 V
1h
90 ms
100
ms
0.1
µs, 50 Ω
4 (2)
IV
-7 V
1 pulse
100 ms, 0.01
Ω
Load dump according to ISO 16750-2:2010
Test B (3)
40 V
5 pulse
1 min
400 ms, 2 Ω
Notes:
(1)US is the peak amplitude as defined for each test pulse in ISO 7637-2:2011(E), chapter 5.6.
(2)Test pulse from ISO 7637-2:2004(E).
(3)With 40 V external suppressor referred to ground (-40°C < Tj < 150 °C).



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