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DS1685 Datasheet(PDF) 21 Page - Maxim Integrated Products |
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DS1685 Datasheet(HTML) 21 Page - Maxim Integrated Products |
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21 / 33 page ![]() DS1685/DS1687 3V/5V Real-Time Clocks 21 of 33 128 x 8 EXTENDED RAM The DS1685/DS1687 provides 128 x 8 of on-chip SRAM, which is controlled as nonvolatile storage sustained by VBAT and/or VBAUX. On power-up, the RAM is accessible after TREC. The on-chip 128 x 8 NV SRAM is accessed by the eight multiplexed address/data lines AD7–AD0. Access to the SRAM is controlled by two on-chip latch registers. One register is used to hold the SRAM address and the other register is used to hold read/write data. The SRAM address space is from 00h to 7Fh. Access to the extended 128 x 8 RAM is controlled by two of the registers shown in Figure 5. The registers in bank 1 must first be selected by setting the DV0 bit in register A to a logic 1. The 7-bit address of the RAM location to be accessed must be loaded into the extended RAM address register located at 50h. Data in the addressed location may be read by performing a read operation from location 53h, or written to by performing a write operation to location 53h. Data in any addressed location may be read or written repeatedly without changing the address in location 50h. EXTENDED CONTROL REGISTERS Two extended control registers are provided to supply controls and status information for the extended features offered by the DS1685/DS1687. These are designated as extended control registers 4A and 4B and are located in register bank 1, locations 04AH and 04BH, respectively. The functions of the bits within these registers are described as follows. Extended Control Register 4A MSB LSB BIT 7 BIT 6 BIT 5 BIT 4 BIT 3 BIT 2 BIT 1 BIT 0 VRT2 INCR * * PAB RF WF KF VRT2 – This status bit gives the condition of the auxiliary battery. It is set to a logic 1 condition when the external lithium battery is connected to the VBAUX. If this bit is read as a logic 0, the external battery should be replaced. INCR – Increment-in-Progress status bit. This bit is set to a 1 when an increment to the time/date registers is in progress and the alarm checks are being made. INCR is set to a 1 at 122 ms before the update cycle starts and is cleared to 0 at the end of each update cycle. PAB – Power-Active Bar control bit. When this bit is 0, the PWR pin is in the active-low state. When this bit is 1, the PWR pin is in the high-impedance state. This bit can be written to a logic 1 or 0 by the user. If either WF and WIE = 1 or KF and KSE = 1, the PAB bit is cleared to 0. RF – Ram Clear Flag. This bit is set to a logic 1 when a high-to-low transition occurs on the RCLR input if RCE = 1. The RF bit is cleared by writing it to a logic 0. This bit can also be written to a logic 1 to force an interrupt condition. WF – Wake-Up Alarm Flag. This bit is set to 1 when a wake-up alarm condition occurs or when the user writes it to a 1. WF is cleared by writing it to a 0. KF – Kickstart Flag. This bit is set to a 1 when a kickstart condition occurs or when the user writes it to a 1. This bit is cleared by writing it to a logic 0. *Reserved bits. These bits are reserved for future use by Dallas Semiconductor. They can be read and written, but have no affect on operation. |
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