SiC620, SiC620A

www.vishay.com

Vishay Siliconix

S14-2385-Rev. E, 08-Dec-14

1

Document Number: 62922

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

DESCRIPTION

The SiC620 and SiC620A are integrated power stage

solutions optimized for synchronous buck applications to

offer high current, high efficiency, and high power density

performance. Packaged in Vishay’s proprietary 5 mm x 5 mm

MLP package, SiC620 and SiC620A enables voltage

regulator designs to deliver up to 60 A continuous current

per phase.

The

internal

power

MOSFETs

utilizes

Vishay’s

state-of-the-art Gen IV TrenchFET technology that delivers

industry benchmark performance to significantly reduce

switching and conduction losses.

The SiC620 and SiC620A incorporates an advanced

MOSFET gate driver IC that features high current driving

capability, adaptive dead-time control, an integrated

bootstrap Schottky diode, a thermal warning (THWn) that

alerts the system of excessive junction temperature, and

zero current detect to improve light load efficiency. The

drivers are also compatible with a wide range of PWM

controllers and supports tri-state PWM, 3.3 V (SiC620A) /

5 V (SiC620) PWM logic.

FEATURES

package

• Vishay’s Gen IV MOSFET technology and a

low-side MOSFET with integrated Schottky

diode

• Delivers up to 60 A continuous current

• 95 % peak efficiency

• High frequency operation up to 1.5 MHz

• Power MOSFETs optimized for 12 V input stage

• 3.3 V (SiC620A) / 5 V (SiC620) PWM logic with tri-state and

hold-off

• Zero current detect control for light load efficiency

improvement

• Low PWM propagation delay (< 20 ns)

• Thermal monitor flag

• Material categorization: for definitions of compliance

APPLICATIONS

• Multi-phase VRDs for CPU, GPU, and memory

TYPICAL APPLICATION DIAGRAM

Fig. 1 - SiC620 and SiC620A Typical Application Diagram

PWM

controller

Gate

driver

5V

ZCD_EN#

DSBL#

PWM

THWn

BOOT

PHASE