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TP3410 Datasheet(PDF) 26 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # TP3410
Description  TP3410 ISDN Basic Access Echo-Cancelling 2B1Q U Transceiver
PDF  32 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

TP3410 Datasheet(HTML) 26 Page - National Semiconductor (TI)

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Absolute Maximum Ratings
If MilitaryAerospace specified devices are required
please contact the National Semiconductor Sales
OfficeDistributors for availability and specifications
VCC to GND
7V
Voltage at Li Lo
VCC a 1V to GND b 1V
Voltage at Any Digital Input
VCC a 1V to GND b 1V
Storage Temperature Range
b
65 Cto a150 C
Current at Lo
g
200 mA
Current at Any Digital Output
g
50 mA
Lead Temperature (Soldering 10 seconds)
300 C
ESD (Human Body Model) J
TBD
iJA (Package Number J28A)
40 CW
Electrical Characteristics
Unless otherwise noted limits printed in bold characters are electrical testing limits at VCC e 50V and TA e 25 C All other
limits are design goals for VCC e 50V g5% and TJ e 0 Cto90 C (refer to Application Note AN-336) This data sheet is still
preliminary and parameter limits are not indicative of characterization data with respect to power supply or temperature varia-
tions Please contact your National Semiconductor Sales Office for the most current product information
Symbol
Parameter
Conditions
Limits
Units
Min
Typ
Max
DIGITAL INTERFACES
VIL
Input Low Voltage
All Digital Inputs
07
V
VIH
Input High Voltage
All Digital Inputs
22
V
VILX
Input Low Voltage
MCLKXTAL Input
05
V
VIHX
Input High Voltage
MCLKXTAL Input
VCC b 05
V
VOL
Output Low Voltage
Br IO e 32 mA
04
V
All Other Digital Outputs IO e 1mA
VOH
Output High Voltage
Br IO e 32 mA
24
V
All Other Digital Outputs IO eb1mA
24
V
All Outputs IO eb100 mAVCC b 05
V
II
Input Current
Any Digital Input GND k VIN k VCC
b
10
10
m
A
IOZ
Output Current in High
Br INT LSD CO Dr
b
10
10
m
A
Impedance State (TRI-STATE )
GND k VOUT k VCC
LINE INTERFACES
RLi
Differential Input Resistance
GND k Lia Lib k VCC
30
kX
CLLo
Load Capacitance
Between Loa and Lob Connected Externally
200
pF
VOS
Differential Output Offset
b
100
a
100
mV
Voltage at Loa Lob
POWER DISSIPATION
ICC0
Power Down Current
All Outputs Open-Circuit
4
mA
ICC1
Power Up Current
Device Activated
65
mA
TRANSMISSION PERFORMANCE
Transmit Pulse Amplitude
RL e 115X between Loa and Lob (Note 2)
g
35
Vpk
Transmit Pulse Linearity
36
60
dB
Input Pulse Amplitude
Differential between Lia and Lib
g
4
g
800
mVpk
Note 1
GND refers to GNDA GNDD1 and GNDD2 commoned together VCC refers to VCCA and VCCD commoned together
Note 2
In the circuits shown in
Figures 9 and 10 terminated in 135X this is equivalent to g25V for isolated pulses of the outer levels Selection of this test mode
is described in the TP3410 Users Manual AN-913
26



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