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AS3636 Datasheet(PDF) 13 Page - ams AG |
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AS3636 Datasheet(HTML) 13 Page - ams AG |
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13 / 42 page ![]() www.austriamicrosystems.com Revision 0.7 13 - 42 with additional features with photosensor AS3636 Preliminary Datasheet, Confidential - D e ta i l e d D e s c r i p t i o n EEPROM Writing Cycle The internal EEPROM is updated under the following two conditions: 1. Life Time Counter: The automatic procedure for update of the internal life time counter is shown in Figure 9; the update of the xenon_life_counter_MSB (see page 28) and xenon_life_counter_LSB is done every 2nd flash cycle (see Figure 5 on page 10) increasing the value by one 7. The counter does not run over 0xFFFFh. 2. NVM Register update: Any update to a NVM register 8 (See Register Map on page 35) through the interface has to be started by writing 138d to the Password_register. Then the NVM can be written. Do not read or write NVM register during the life time counter is updated. If further bytes should be written, the user shall wait until the Password_register is reset by the AS3636 as shown in Figure 9 9. Figure 9. EEPROM Writing Cycle If the junction temperature exceeds 85ºC, the EEPROM writing is postponed until the internal temperature drops (An I 2C read to this register will return the old value during this time). Then the writing cycle is automatically executed. See austriamicrosystems application note ‘AN3636_In-Production_Trimming_xvx.pdf’ for a detailed description of the trimming parameters and procedure. 7. Allow minimum 48ms between updates of the xenon life time counter. Updates happen every 2nd flash pulse. 8. The xenon life time counter (xenon_life_counter_MSB and xenon_life_counter_LSB) cannot be changed. 9. Do not initiate an EEPROM writing cycle during flash as this might collide with the xenon life time counter update. !"# $ ! !!%# &! '()$ * !!%# &! '()$+ '( * &, # -.&/ 0 ! "# $ & #1- ! 2 !)# )1- ! !)#1% 1- % !!%# & ! 1! 3$ 4 # #1- -"/5 !$ |
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