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Revision 0.7

3 - 42

with additional features

with photosensor

AS3636

Preliminary Datasheet, Confidential - A b s o l u t e M a x i m u m R a t i n g s

5 Absolute Maximum Ratings

Stresses beyond those listed in Table 2 may cause permanent damage to the device. These are stress ratings only,

and functional operation of the device at these or any other conditions beyond those indicated in Table 3, “Electrical

Characteristics,” on page 4 is not implied. Exposure to absolute maximum rating conditions for extended periods may

affect device reliability.

Table 2. Absolute Maximum Ratings

Parameter

Min

Max

Units

Comments

VBAT, VBATINT to GND

-0.3

+7.0

V

SDA, SCL, STROBE, INT, TORCH,

IGBT_GATE, SW_B, VOUTBOOST, VLED,

IND to GND

-0.3

VBATIN

T + 0.3

V

max. 7.0V

SW_F to GND

-0.3

+55.0

V

VOUTBOOST to SW_B

-0.3

V

Note: Diode between VOUTBOOST

and SW_B

SGND, DGND, PGND to GND

0.0

0.0

V

Connect SGND, DGND and PGND to

GND directly below the pad (short

connection required)

Input Pin Current without causing latchup

-100

+100

mA

Norm: EIA/JESD78

Continuous power dissipation

1W

1

1. Depending on actual PCB layout and PCB used; for peak power dissipation during flashing see document

'AS3636 Thermal Measurements'

Continuous power dissipation derating factor

14.7

mW/ºC

2

Electrostatic Discharge

ESD pins VBAT, SDA, SCL, STROBE, INT,

TORCH

±15000

V

Air Discharge to

module; IEC 61000 -4 -2 test bench

3

permanent interruption of operation; proper layout required

±8000

V

Contact Test to module;

IEC 61000 -4 -2 test bench

3

ESD HBM

±2000

V

Norm: MIL 883 E Method 3015

ESD CDM

±500

V

Norm: JEDEC JESD 22-C101C

ESD MM

±100

V

Norm: JEDEC JESD 22-A115-A level A

Temperature Ranges and Storage Conditions

Junction Temperature

+150

ºC

Internally limited (overtemperature

protection)

Storage Temperature Range

-55

+125

ºC

Humidity

5

85

%

Non condensing

Body Temperature during Soldering

+260

ºC

according to IPC/JEDEC J-STD-020C

Fuse

1000

ms

at 1.5A

typ. 100

ms

at 2A

650

mA