BF1206 datasheet(8/21 Pages) PHILIPS

Part #	BF1206

Description	Dual N-channel dual-gate MOS-FET

PDF	21 Pages

Scroll/Zoom	100%

Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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8 / 21 page

2003 Nov 17

Philips Semiconductors

Product speciﬁcation

Dual N-channel dual-gate MOS-FET

BF1206

handbook, halfpage

(1)

(2)

(3)

(5)

(7)

VGG = VDS (V)

(mA)

MLE288

(4)

(6)

Fig.9

Drain current as a function of gate 1 (VGG)

and drain supply voltage; typical values;

amplifier a.

VG2-S = 4 V; Tj =25 °C; RG1 = 150 kΩ (connected to VGG); see Fig.35.

(1) RG1 =56kΩ.

(2) RG1 =68kΩ.

(3) RG1 =82kΩ.

(4) RG1 =91kΩ.

(5) RG1 = 100 kΩ.

(6) RG1 = 120 kΩ.

(7) RG1 = 150 kΩ.

handbook, halfpage

VG2-S(V)

(mA)

MLE292

(1)

(4)

(5)

(3)

(2)

Fig.10 Drain current as a function of gate 2

voltage; typical values; amplifier a.

VDS = 5 V; Tj =25 °C; RG1 =91kΩ (connected to VGG); see Fig.35.

(1) VGG =5V.

(2) VGG = 4.5 V.

(3) VGG =4V.

(4) VGG = 3.5 V.

(5) VGG =3V.

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