BF1206 datasheet(2/21 Pages) PHILIPS

2 / 21 page

2003 Nov 17

Philips Semiconductors

Product speciﬁcation

Dual N-channel dual-gate MOS-FET

BF1206

FEATURES

• Two low noise gain controlled amplifiers in a single

package

• Superior cross-modulation performance during AGC

• High forward transfer admittance

• High forward transfer admittance to input capacitance

ratio.

APPLICATIONS

• Gain controlled low noise amplifiers for VHF and UHF

applications with 5 V supply voltage, such as digital and

analog television tuners.

DESCRIPTION

The BF1206 is a combination of two different dual gate

MOS-FET amplifiers with shared source and gate 2 leads.

The source and substrate are interconnected. Internal bias

circuits enable DC stabilization and a very good

cross-modulation performance during AGC. Integrated

diodes between the gates and source protect against

excessive input voltage surges. The transistor is

encapsulated in SOT363 micro-miniature plastic package.

PINNING - SOT363

DESCRIPTION

drain (b)

source

gate 1 (b)

gate 1 (a)

gate 2

drain (a)

handbook, halfpage

654

Top view

MAM480

AMP

d (a)

g1 (a)

d (b)

g1 (b)

AMP

Fig.1 Simplified outline and symbol.

Marking code: L6-.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN. TYP. MAX.

UNIT

Per MOS-FET; unless otherwise speciﬁed

VDS

drain-source voltage

−−

drain current (DC)

−−

y

fs

forward transfer admittance

amp. a: ID = 18 mA

333848

amp. b: ID = 12 mA

293444

Cig1-s

input capacitance at gate 1

amp. a: ID = 18 mA; f = 1 MHz

−

2.4

2.9

amp. b: ID = 12 mA; f = 1 MHz

−

1.7

2.2

Crss

reverse transfer capacitance

f = 1 MHz

−

Xmod

cross-modulation

amp. a: input level for k = 1% at

40 dB AGC

102

105

−

µV

amp. b: input level for k = 1% at

40 dB AGC

100

103

−

µV

noise ﬁgure

amp. a: f = 400 MHz; ID =18mA

−

1.3

1.9

amp. b: f = 800 MHz; ID =12mA

−

1.4

2.0

amp. a: f = 11 MHz; ID =18mA

−

amp. b: f = 11 MHz; ID =12mA

−

3.5

−

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