BF1206 datasheet(4/21 Pages) PHILIPS

4 / 21 page

2003 Nov 17

Philips Semiconductors

Product speciﬁcation

Dual N-channel dual-gate MOS-FET

BF1206

handbook, halfpage

050

Ts (°C)

Ptot

(mW)

100

200

150

100

150

MLE257

Fig.2 Power derating curve.

STATIC CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Note

1. RG1 connects gate 1 to VGG =5V.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per MOS-FET unless otherwise speciﬁed

V(BR)DSS

drain-source breakdown voltage

VG1-S =VG2-S = 0; ID =10 µA6

−

V(BR)G1-SS

gate-source breakdown voltage

VGS =VDS = 0; IG1-S =10mA

V(BR)G2-SS

gate-source breakdown voltage

VGS =VDS = 0; IG2-S =10mA

V(F)S-G1

forward source-gate voltage

VG2-S =VDS = 0; IS-G1 = 10 mA

0.5

1.5

V(F)S-G2

forward source-gate voltage

VG1-S =VDS = 0; IS-G2 = 10 mA

0.5

1.5

VG1-S(th)

gate-source threshold voltage

VDS =5V; VG2-S =4V; ID = 100 µA

0.3

VG2-S(th)

gate-source threshold voltage

VDS =5V; VG1-S =5V; ID = 100 µA

0.35

IDSX

drain-source current

amp. a:

VG2-S =4V; VDS =5V; RG =91kΩ; note 1

amp. b:

VG2-S =4V; VDS =5V; RG = 150 kΩ; note 1

917

IG1-S

gate cut-off current

VG1-S =5V; VG2-S =VDS =0

−

IG2-S

gate cut-off current

VG2-S =5V; VG1-S =VDS =0

−

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