2003 Nov 17

3

Philips Semiconductors

Product specification

Dual N-channel dual-gate MOS-FET

BF1206

ORDERING INFORMATION

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

THERMAL CHARACTERISTICS

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport

and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

TYPE NUMBER

PACKAGE

NAME

DESCRIPTION

VERSION

BF1206

−

plastic surface mounted package; 6 leads

SOT363

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per MOS-FET; unless otherwise specified

drain-source voltage

−

6V

drain current (DC)

−

30

mA

gate 1 current

−±10

mA

gate 2 current

−±10

mA

total power dissipation

−

180

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

SYMBOL

PARAMETER

VALUE

UNIT

thermal resistance from junction to soldering point

240

K/W