BF1206 datasheet(9/21 Pages) PHILIPS

9 / 21 page

2003 Nov 17

Philips Semiconductors

Product speciﬁcation

Dual N-channel dual-gate MOS-FET

BF1206

handbook, halfpage

VG2-S(V)

IG1

(

µA)

MLE264

(1)

(2)

(3)

(4)

(5)

Fig.11 Gate 1 current as a function of gate 2

voltage; typical values; amplifier a.

VDS 5 V; Tj =25 °C.

RG1 =91kΩ (connected to VGG); see Fig.35.

(1) VGG =5V.

(2) VGG = 4.5 V.

(3) VGG =4V.

(4) VGG = 3.5 V.

(5) VGG =3V.

handbook, halfpage

010

120

110

100

gain reduction (dB)

Vunw

(dB

µV)

MLE266

Fig.12 Unwanted voltage for 1% cross-modulation

as a function of gain reduction; typical values;

amplifier a.

VDS = 5 V; VGG = 5 V; RG1 =91kΩ; f = 50 MHz; f unw = 60 MHz;

Tamb =25 °C; see Fig.35.

handbook, halfpage

VAGC (V)

gain

reduction

(dB)

−50

−10

−20

−30

−40

MLE265

Fig.13 Typical gain reduction as a function of AGC

voltage; typical values; amplifier a.

VDS = 5 V; VGG = 5 V; RG1 =91kΩ; f = 50 MHz; Tamb =25 °C;

see Fig.35.

handbook, halfpage

050

(mA)

gain reduction (dB)

MLE267

Fig.14 Drain current as a function of gain

reduction; typical values; amplifier a.

VDS = 5 V; VGG = 5 V; RG1 =91kΩ; f = 50 MHz; Tamb =25 °C;

see Fig.35.

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