BF1206 datasheet(12/21 Pages) PHILIPS

12 / 21 page

2003 Nov 17

Philips Semiconductors

Product speciﬁcation

Dual N-channel dual-gate MOS-FET

BF1206

DYNAMIC CHARACTERISTICS AMPLIFIER b

Common source; Tamb =25 °C; VG2-S =4V; VDS =5V; ID = 12 mA; unless otherwise speciﬁed.

Notes

1. Calculated from measured s-parameters.

2. Measured in Fig.35 test circuit.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

yfs

forward transfer admittance

pulsed; Tj =25 °C

293444mS

Cig1-ss

input capacitance at gate 1

f = 1 MHz

−

1.7

2.2

Cig2-ss

input capacitance at gate 2

f = 1 MHz

−

4.2

−

Coss

output capacitance

f = 1 MHz

−

0.85

−

Crss

reverse transfer capacitance f = 1 MHz

−

noise ﬁgure

f = 11 MHz; GS = 20 mS; BS =0

−

3.5

−

f = 400 MHz; YS =YS opt

−

1.3

1.9

f = 800 MHz; YS =YS opt

−

1.4

Gtr

power gain

f = 200 MHz; GS = 2 mS; BS =BS opt;

GL = 0.5 mS; BL =BL opt; note 1

−

f = 400 MHz; GS = 2 mS; BS =BS opt;

GL = 1 mS; BL =BL opt; note 1

−

f = 800 MHz; GS = 3.3 mS; BS =BS opt;

GL = 1 mS; BL =BL opt; note 1

−

Xmod

cross-modulation

input level for k = 1%; fw = 50 MHz;

funw = 60 MHz; note 2

at 0 dB AGC

−−

µV

at 10 dB AGC

−

µV

at 40 dB AGC

100

103

−

µV

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