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ISL6527IBZ Datasheet(PDF) 12 Page - Renesas Technology Corp |
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ISL6527IBZ Datasheet(HTML) 12 Page - Renesas Technology Corp |
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12 / 17 page ![]() ISL6527, ISL6527A FN9056 Rev 11.00 Page 12 of 17 Sep 29, 2015 approximate response time interval for application and removal of a transient load: where: ITRAN is the transient load current step, tRISE is the response time to the application of load, and tFALL is the response time to the removal of load. The worst case response time can be either at the application or removal of load. Be sure to check both Equations 14 and 15 at the minimum and maximum output levels for the worst case response time. Input Capacitor Selection Use a mix of input bypass capacitors to control the voltage overshoot across the MOSFETs. Use small ceramic capacitors for high frequency decoupling and bulk capacitors to supply the current needed each time Q1 turns on. Place the small ceramic capacitors physically close to the MOSFETs and between the drain of Q1 and the source of Q2. The important parameters for the bulk input capacitor are the voltage rating and the RMS current rating. For reliable operation, select the bulk capacitor with voltage and current ratings above the maximum input voltage and largest RMS current required by the circuit. The capacitor voltage rating should be at least 1.25x greater than the maximum input voltage and a voltage rating of 1.5x is a conservative guideline. The RMS current rating requirement for the input capacitor of a buck regulator is approximately 1/2 the DC load current. The maximum RMS current required by the regulator may be closely approximated through Equation 16: For a through-hole design, several electrolytic capacitors may be needed. For surface mount designs, solid tantalum capacitors can be used, but caution must be exercised with regard to the capacitor surge current rating. These capacitors must be capable of handling the surge-current at power-up. Some capacitor series available from reputable manufacturers are surge current tested. MOSFET Selection/Considerations The ISL6527, ISL6527A require two N-Channel power MOSFETs. These should be selected based upon rDS(ON), gate supply requirements, and thermal management requirements. In high-current applications, the MOSFET power dissipation, package selection and heatsink are the dominant design factors. The power dissipation includes two loss components; conduction loss and switching loss. The conduction losses are the largest component of power dissipation for both the upper and the lower MOSFETs. These losses are distributed between the two MOSFETs according to duty factor. The switching losses seen when sourcing current will be different from the switching losses seen when sinking current. When sourcing current, the upper MOSFET realizes most of the switching losses. The lower switch realizes most of the switching losses when the converter is sinking current (see Equations 17 and 18). These equations assume linear voltage-current transitions and do not adequately model power loss due the reverse-recovery of the upper and lower MOSFET’s body diode. The gate-charge losses are dissipated by the ISL6527, ISL6527A and don't heat the MOSFETs. However, large gate-charge increases the switching interval, tSW which increases the MOSFET switching losses. Ensure that both MOSFETs are within their maximum junction temperature at high ambient temperature by calculating the temperature rise according to package thermal-resistance specifications. A separate heatsink may be necessary depending upon MOSFET power, package type, ambient temperature and air flow. where: D is the duty cycle = VOUT/VIN, tSW is the combined switch ON- and OFF-time, and fS is the switching frequency. Given the reduced available gate bias voltage (5V), logic-level or sub-logic-level transistors should be used for both N-MOSFETs. Caution should be exercised with devices exhibiting very low VGS(ON) characteristics. The shoot-through protection present aboard the ISL6527, ISL6527A may be circumvented by these MOSFETs if they have large parasitic impedances and/or capacitances that would inhibit the gate of the MOSFET from being discharged below its threshold level before the complementary MOSFET is turned on. Bootstrap Component Selection External bootstrap components, a diode and capacitor, are required to provide sufficient gate enhancement to the upper MOSFET. The internal MOSFET gate driver is supplied by the external bootstrap circuitry as shown in Figure 7. The boot capacitor, CBOOT, develops a floating supply voltage referenced to the PHASE pin. This supply is refreshed each cycle, when DBOOT conducts, to a voltage of CPVOUT less the boot diode drop, VD, plus the voltage rise across QLOWER. Just after the PWM switching cycle begins and the charge transfer from the bootstrap capacitor to the gate capacitance is complete, the voltage on the bootstrap capacitor is at its lowest point during the switching cycle. The charge lost on the bootstrap capacitor will be equal to the charge transferred to tRISE = L x ITRAN VIN - VOUT (EQ. 14) tFALL = L x ITRAN VOUT (EQ. 15) IRMS MAX VOUT VIN ---------------- IOUT MAX 2 1 12 ------ VIN VOUT – Lfs -------------------------------- VOUT VIN ---------------- 2 + = (EQ. 16) PLOWER = Io2 x rDS(ON) x (1 - D) Losses while Sourcing current PUPPER Io 2 rDS ON D 1 2 --- Io VIN tSW fs + = (EQ. 17) Losses while Sinking current PLOWER Io 2 rDS ON 1D – 1 2 --- Io VIN tSW fs + = PUPPER = Io2 x rDS(ON) x D (EQ. 18) |
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