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ISL6527IBZ Datasheet(PDF) 12 Page - Renesas Technology Corp

Part # ISL6527IBZ
Description  Single Synchronous Buck Pulse-Width Modulation (PWM) Controller
PDF  17 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

ISL6527IBZ Datasheet(HTML) 12 Page - Renesas Technology Corp

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ISL6527, ISL6527A
FN9056 Rev 11.00
Page 12 of 17
Sep 29, 2015
approximate response time interval for application and removal
of a transient load:
where: ITRAN is the transient load current step, tRISE is the
response time to the application of load, and tFALL is the
response time to the removal of load. The worst case response
time can be either at the application or removal of load. Be
sure to check both Equations 14 and 15 at the minimum and
maximum output levels for the worst case response time.
Input Capacitor Selection
Use a mix of input bypass capacitors to control the voltage
overshoot across the MOSFETs. Use small ceramic capacitors
for high frequency decoupling and bulk capacitors to supply the
current needed each time Q1 turns on. Place the small ceramic
capacitors physically close to the MOSFETs and between the
drain of Q1 and the source of Q2.
The important parameters for the bulk input capacitor are the
voltage rating and the RMS current rating. For reliable operation,
select the bulk capacitor with voltage and current ratings above
the maximum input voltage and largest RMS current required by
the circuit. The capacitor voltage rating should be at least 1.25x
greater than the maximum input voltage and a voltage rating of
1.5x is a conservative guideline. The RMS current rating
requirement for the input capacitor of a buck regulator is
approximately 1/2 the DC load current.
The maximum RMS current required by the regulator may be
closely approximated through Equation 16:
For a through-hole design, several electrolytic capacitors may be
needed. For surface mount designs, solid tantalum capacitors can
be used, but caution must be exercised with regard to the
capacitor surge current rating. These capacitors must be capable
of handling the surge-current at power-up. Some capacitor series
available from reputable manufacturers are surge current tested.
MOSFET Selection/Considerations
The ISL6527, ISL6527A require two N-Channel power
MOSFETs. These should be selected based upon rDS(ON), gate
supply requirements, and thermal management requirements.
In high-current applications, the MOSFET power dissipation,
package selection and heatsink are the dominant design factors.
The power dissipation includes two loss components;
conduction loss and switching loss. The conduction losses are
the largest component of power dissipation for both the upper
and the lower MOSFETs. These losses are distributed between
the two MOSFETs according to duty factor. The switching losses
seen when sourcing current will be different from the switching
losses seen when sinking current. When sourcing current, the
upper MOSFET realizes most of the switching losses. The lower
switch realizes most of the switching losses when the converter
is sinking current (see Equations 17 and 18). These equations
assume linear voltage-current transitions and do not adequately
model power loss due the reverse-recovery of the upper and
lower MOSFET’s body diode. The gate-charge losses are
dissipated by the ISL6527, ISL6527A and don't heat the
MOSFETs. However, large gate-charge increases the switching
interval, tSW which increases the MOSFET switching losses.
Ensure that both MOSFETs are within their maximum junction
temperature at high ambient temperature by calculating the
temperature rise according to package thermal-resistance
specifications. A separate heatsink may be necessary
depending upon MOSFET power, package type, ambient
temperature and air flow.
where: D is the duty cycle = VOUT/VIN, tSW is the combined
switch ON- and OFF-time, and fS is the switching frequency.
Given the reduced available gate bias voltage (5V), logic-level or
sub-logic-level transistors should be used for both N-MOSFETs.
Caution should be exercised with devices exhibiting very low
VGS(ON) characteristics. The shoot-through protection present
aboard the ISL6527, ISL6527A may be circumvented by these
MOSFETs if they have large parasitic impedances and/or
capacitances that would inhibit the gate of the MOSFET from
being discharged below its threshold level before the
complementary MOSFET is turned on.
Bootstrap Component Selection
External bootstrap components, a diode and capacitor, are
required to provide sufficient gate enhancement to the upper
MOSFET. The internal MOSFET gate driver is supplied by the
external bootstrap circuitry as shown in Figure 7. The boot
capacitor, CBOOT, develops a floating supply voltage referenced
to the PHASE pin. This supply is refreshed each cycle, when
DBOOT conducts, to a voltage of CPVOUT less the boot diode
drop, VD, plus the voltage rise across QLOWER.
Just after the PWM switching cycle begins and the charge
transfer from the bootstrap capacitor to the gate capacitance is
complete, the voltage on the bootstrap capacitor is at its lowest
point during the switching cycle. The charge lost on the
bootstrap capacitor will be equal to the charge transferred to
tRISE =
L x ITRAN
VIN - VOUT
(EQ. 14)
tFALL =
L x ITRAN
VOUT
(EQ. 15)
IRMS
MAX
VOUT
VIN
----------------
IOUT
MAX
2
1
12
------
VIN VOUT
–
Lfs
--------------------------------
VOUT
VIN
----------------


 2
+



=
(EQ. 16)
PLOWER = Io2 x rDS(ON) x (1 - D)
Losses while Sourcing current
PUPPER
Io
2
rDS ON

D
1
2
--- Io
VIN
tSW fs
+
=
(EQ. 17)
Losses while Sinking current
PLOWER
Io
2
rDS ON

1D
–

1
2
--- Io
VIN
tSW fs
+
=
PUPPER = Io2 x rDS(ON) x D
(EQ. 18)



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