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AS39513 Datasheet(PDF) 9 Page - ams AG |
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AS39513 Datasheet(HTML) 9 Page - ams AG |
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9 / 108 page ![]() ams Datasheet Page 9 [v1-10] 2018-Apr-25 Document Feedback AS39513 − Electrical Characteristics Note(s): 1. Temperature 25°C, supply VBAT=3.3V from RF field unless noted otherwise 2. CMOS inputs CE and SCLK have 100k Ohm pull down resistor permanently connected. CMOS Input DIN can be configured with pull up or pull down. See DIMD[1:0]. 3. Below VBAT=1.35V operation and performance of AS39513 is not guaranteed. 4. Temperature sensor accuracy measured performance on wafer with gold bumped die measured at 3.0V for 3V trimmed devices and 1.5V for 1.5V trimmed devices. Assembly method can influence the temperature sensor accuracy. tIDLE Time to enter idle state after power up 300 μs Hmin3Vbat Sensitivity 3V battery assisted mode 150 mA/m Class ID-1 antenna VBAT=3.0V Hmin1_5Vbat Sensitivity 1.5V battery assisted mode 150 mA/m Class ID-1 antenna VBAT=1.5V Hminpass Sensitivity passive mode 280 mA/m Class ID-1 antenna CMOS Digital Input with 100k Ohm Pull-Down: CE, SCLK and DIN with Pull-Down Enabled(2) VIH High Level Input Voltage 0.7* VBAT V VIL Low Level Input Voltage 0.3*VBAT V ILEAK Input Leakage Current 1 μA VIL = 0V RD Pull-Down Resistance 100 kΩ IPD Pull-Down Current 10 50 μA VIH = VBAT CMOS Digital Input with 30k Ohm Pull-Up Active: DIN with Pull-Up Enabled VIH High Level Input Voltage 0.7* VBAT V VIL Low Level Input Voltage 0.3*VBAT V ILEAK Input Leakage Current -1 1 μA VIH = VBAT RU Pull-Up Resistance on DIN (optional see DIMD[1:0]) 30 kΩ IPU Pull-Up Current 30 160 μA VIL = 0V CMOS Digital Output DOUT ROSO Output Resistance Source 1.85 kΩ ROSI Output Resistance Sink 200 Ω Symbol Parameter Min Typ Max Unit Conditions |
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