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DLPC3479 Datasheet(PDF) 13 Page - Texas Instruments |
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DLPC3479 Datasheet(HTML) 13 Page - Texas Instruments |
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13 / 61 page  13 DLPC3479 www.ti.com DLPS112 – JUNE 2018 Product Folder Links: DLPC3479 Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated Table 1. I/O Type Subscript Definition I/O SUPPLY REFERENCE ESD STRUCTURE SUBSCRIPT DESCRIPTION 1 1.8-V LVCMOS I/O buffer with 8-mA drive VCC18 ESD diode to GND and supply rail 2 1.8-V LVCMOS I/O buffer with 4-mA drive VCC18 ESD diode to GND and supply rail 3 1.8-V LVCMOS I/O buffer with 24-mA drive VCC18 ESD diode to GND and supply rail 4 1.8-V sub-LVDS output with 4-mA drive VCC18 ESD diode to GND and supply rail 5 1.8-, 2.5-, 3.3-V LVCMOS with 4-mA drive VCC_INTF ESD diode to GND and supply rail 6 1.8-V LVCMOS input VCC18 ESD diode to GND and supply rail 7 1.8-, 2.5-, 3.3-V I2C with 3-mA drive VCC_INTF ESD diode to GND and supply rail 8 1.8-V I2C with 3-mA drive VCC18 ESD diode to GND and supply rail 9 1.8-, 2.5-, 3.3-V LVCMOS with 8-mA drive VCC_INTF ESD diode to GND and supply rail 11 1.8, 2.5, 3.3-V LVCMOS input VCC_INTF ESD diode to GND and supply rail 12 1.8-, 2.5-, 3.3-V LVCMOS input VCC_FLSH ESD diode to GND and supply rail 13 1.8-, 2.5-, 3.3-V LVCMOS with 8-mA drive VCC_FLSH ESD diode to GND and supply rail (1) The resistance is dependent on the supply voltage level applied to the I/O. (2) An external 8-kΩ pullup or pulldown (if needed) would work for any voltage condition to correctly pull enough to override any associated internal pullups or pulldowns. Table 2. Internal Pullup and Pulldown Characteristics(1)(2) INTERNAL PULLUP AND PULLDOWN RESISTOR CHARACTERISTICS VCCIO MIN MAX UNIT Weak pullup resistance 3.3 V 29 63 kΩ 2.5 V 38 90 kΩ 1.8 V 56 148 kΩ Weak pulldown resistance 3.3 V 30 72 kΩ 2.5 V 36 101 kΩ 1.8 V 52 167 kΩ |
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