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FT28HC256 Datasheet(PDF) 9 Page - Force Technologies Ltd

Part # FT28HC256
Description  5 Volt, Byte Alterable EEPROM
PDF  23 Pages
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Manufacturer  FORCE [Force Technologies Ltd]
Direct Link   https://www.forcetechnologies.co.uk
Logo FORCE - Force Technologies Ltd

FT28HC256 Datasheet(HTML) 9 Page - Force Technologies Ltd

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FT28HC256
Characteristics subject to change without notice.
9 of 23
REV 1.O
ABSOLUTE MAXIMUM RATINGS
Temperature under bias
FT28HC256 ...................................... –10°C to +85°C
FT28HC256I, FT28HC256M............. –65°C to +135°C
Storage temperature ........................ –65°C to +150°C
Voltage on any pin with
respect to VSS ........................................–1V to +7V
D.C. output current ............................................. 10mA
Lead temperature (soldering, 10 seconds)........ 300°C
COMMENT
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only; functional operation of the
device (at these or any other conditions above those indi-
cated in the operational sections of this specification) i
not implied. Exposure to absolute maximum rating condi-
tions for extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
Temperature
Min.
Max.
Commercial
0°C
+70°C
Industrial
–40°C
+85°C
Military
–55°C
+125°C
Supply Voltage
Limits
FT28HC256
5V ±10%
D.C. OPERATING CHARACTERISTICS
(Over recommended operating conditions unless otherwise specified.)
Notes:
(1) Typical values are for TA = 25°C and nominal supply voltage.
(2) VIL min. and VIH max. are for reference only and are not tested.
POWER-UP TIMING
Note:
(3) This parameter is periodically sampled and not 100% tested.
Symbol
Parameter
Limits
Unit
Test Conditions
Min.
Typ.(7)
Max.
ICC
VCC active current
(TTL Inputs)
30
60
mA
CE = OE = VIL, WE = VIH, All I/O’s = open,
address inputs = .4V/2.4V levels @ f = 10MHz
ISB1
VCC standby current
(TTL Inputs)
1
2
mA
CE = VIH, OE = VIL, All I/O’s = open, other
inputs = VIH
ISB2
VCC standby current
(CMOS Inputs)
200
500
µA
CE = VCC – 0.3V, OE= GND, All I/Os = open,
other inputs = VCC – 0.3V
ILI
Input leakage current
10
µA
VIN = VSS to VCC
ILO
Output leakage current
10
µA
VOUT = VSS to VCC, CE = VIH
VlL(2)
Input LOW voltage
–1
0.8
V
VIH(2)
Input HIGH voltage
2
VCC + 1
V
VOL
Output LOW voltage
0.4
V
IOL = 6mA
VOH
Output HIGH voltage
2.4
V
IOH = –4mA
Symbol
Parameter
Max.
Unit
tPUR(3)
Power-up to read
100
µs
tPUW(3)
Power-up to write
5
ms



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