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FT28HC256 Datasheet(PDF) 1 Page - Force Technologies Ltd |
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FT28HC256 Datasheet(HTML) 1 Page - Force Technologies Ltd |
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1 / 23 page ![]() REV 1.0 Characteristics subject to change without notice. 1 of 23 256 k 32k X 8 bit FT28HC256 5 Volt, Byte Alterable EEPROM FEATURES • Access time: 90ns • Simple byte and page write —Single 5V supply —No external high voltages or VPP control circuits —Self-timed —No erase before write —No complex programming algorithms —No overerase problem • Low power CMOS —Active: 60mA —Standby: 500µA • Software data protection —Protects data against system level inadvertent writes • High speed page write capability • Highly reliable direct Write —Endurance: 1,000,000 cycles —Data retention: 100 years • Early end of write detection —DATA polling —Toggle bit polling DESCRIPTION The FT28HC256 is a second generation high perfor- mance 32K x 8 EEPROM. BLOCK DIAGRAM X Buffers Latches and Decoder I/O Buffers and Latches Y Buffers Latches and DECODER Control Logic and Timing 256Kbit EEPROM Array I/O0–I/O7 Data Inputs/Outputs CE OE VCC VSS A0–A14 WE Address Inputs The FT28HC256 supports a 128-byte page write opera- tion, effectively providing a 24µs/byte write cycle, and enabling the entire memory to be typically rewritten in less than 0.8 seconds. The FT28HC256 also features DATA Polling and Toggle Bit Polling, two methods of providing early end of write detection. The FT28HC256 also supports the JEDEC standard Software Data Pro- tection feature for protecting against inadvertent writes during power-up and power-down. Endurance for the FT28HC256 is specified as a mini- mum 1,000,000 writecycles per byte and an inherent data retention of 100 years. |
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