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LTC2480CDD Datasheet(PDF) 29 Page - Linear Technology |
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LTC2480CDD Datasheet(HTML) 29 Page - Linear Technology |
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29 / 40 page ![]() 29 LTC2480 2480f Reference Current In a similar fashion, the LTC2480 samples the differential reference pins VREF+ and GND transferring small amount of charge to and from the external driving circuits thus producing a dynamic reference current. This current does not change the converter offset, but it may degrade the gain and INL performance. The effect of this current can be analyzed in two distinct situations. For relatively small values of the external reference capaci- tors (CREF < 1nF), the voltage on the sampling capacitor settles almost completely and relatively large values for the source impedance result in only small errors. Such values for CREF will deteriorate the converter offset and gain performance without significant benefits of reference filtering and the user is advised to avoid them. Larger values of reference capacitors (CREF > 1nF) may be required as reference filters in certain configurations. Such capacitors will average the reference sampling charge and the external source resistance will see a quasi con- stant reference differential impedance. In the following discussion, it is assumed the input and reference common mode are the same. Using internal oscillator for 60Hz mode, the typical differential refer- ence resistance is 1M Ω which generates a full-scale (VREF/2) gain error of 0.51ppm for each ohm of source resistance driving the VREF pin. For 50Hz/60Hz mode, the related difference resistance is 1.1M Ω and the resulting full-scale error is 0.46ppm for each ohm of source resistance driving the VREF pin. For 50Hz mode, the related difference resistance is 1.2M Ω and the resulting full-scale error is 0.42ppm for each ohm of source resistance driving the VREF pin. When FO is driven by an external oscillator with a frequency fEOSC (external con- version clock operation), the typical differential reference resistance is 0.30 • 1012/fEOSC Ω and each ohm of source resistance driving the VREF pin will result in 1.67 • 10–6 • fEOSCppm gain error. The typical +FS and –FS errors for various combinations of source resistance seen by the VREF pin and external capacitance connected to that pin are shown in Figures 15-18. In addition to this gain error, the converter INL perfor- mance is degraded by the reference source impedance. The INL is caused by the input dependent terms –VIN2/(VREF • REQ) – (0.5 • VREF • DT)/REQ in the reference pin current as expressed in Figure 11. When using internal oscillator and 60Hz mode, every 100 Ω of reference source resistance translates into about 0.67ppm additional INL error. When using internal oscillator and 50Hz/60Hz mode, every 100 Ω of reference source resistance translates into about 0.61ppm additional INL error. When using internal oscillator and 50Hz mode, every 100 Ω of reference source resistance translates into about 0.56ppm additional INL error. When FO is driven by an external oscillator with a frequency fEOSC, every 100Ω of source resistance driving VREF translates into about 2.18 • 10–6 • fEOSCppm addi- tional INL error. Figure 19 shows the typical INL error due to the source resistance driving the VREF pin when large CREF values are used. The user is advised to minimize the source impedance driving the VREF pin. In applications where the reference and input common mode voltages are different, extra errors are introduced. For every 1V of the reference and input common mode voltage difference (VREFCM – VINCM) and a 5V reference, each Ohm of reference source resistance introduces an extra (VREFCM – VINCM)/(VREF • REQ) full-scale gain error, which is 0.074ppm when using internal oscillator and 60Hz mode. When using internal oscillator and 50Hz/60Hz mode, the extra full-scale gain error is 0.067ppm. When using internal oscillator and 50Hz mode, the extra gain error is 0.061ppm. If an external clock is used, the corre- sponding extra gain error is 0.24 • 10–6 • fEOSCppm. The magnitude of the dynamic reference current depends upon the size of the very stable internal sampling capaci- tors and upon the accuracy of the converter sampling clock. The accuracy of the internal clock over the entire temperature and power supply range is typically better than 0.5%. Such a specification can also be easily achieved by an external clock. When relatively stable resistors (50ppm/ °C) are used for the external source impedance seen by VREF+ and GND, the expected drift of the dynamic current gain error will be insignificant (about 1% of its value over the entire temperature and voltage range). Even for the most stringent applications a one-time calibration operation may be sufficient. In addition to the reference sampling charge, the reference pins ESD protection diodes have a temperature dependent APPLICATIO S I FOR ATIO |
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