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TE28F320B3BC90 Datasheet(PDF) 30 Page - Intel Corporation

Part # TE28F320B3BC90
Description  3 Volt Advanced Boot Block Flash Memory
PDF  58 Pages
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Manufacturer  INTEL [Intel Corporation]
Direct Link  http://www.intel.com
Logo INTEL - Intel Corporation

TE28F320B3BC90 Datasheet(HTML) 30 Page - Intel Corporation

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28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
24
3UHOLPLQDU\
AC Characteristics, Continued
NOTES:
1. OE# may be delayed up to tELQV–tGLQV after the falling edge of CE# without impact on tELQV.
2. Sampled, but not 100% tested.
See Figure 7, “AC Waveform: Read Operations” on page 26.
See Figure 5, “Input/Output Reference Waveform” on page 22 for timing measurements and maximum
allowable input slew rate.
#Sym
Para-
meter
Density
16 Mbit
Unit
Product
70 ns
80 ns
90 ns
110 ns
VCC
2.7 V–3.6 V
2.7 V–3.6 V
3.0 V–3.6 V
2.7 V–3.6 V
3.0 V–3.6 V
2.7 V–3.6 V
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
R1
tAVAV
Read Cycle Time
70
80
80
90
100
110
ns
R2
tAVQV
Address to Output
Delay
70
80
80
90
100
110
ns
R3
tELQV
CE# to Output
Delay(1)
70
80
80
90
100
110
ns
R4
tGLQV
OE# to Output
Delay
(1)
20
20
30
30
30
30
ns
R5
tPHQV
RP# to Output Delay
150
150
600
600
600
600
ns
R6
tELQX
CE# to Output in
Low Z(2)
0
000
00
ns
R7
tGLQX
OE# to Output in
Low Z(2)
0
000
00
ns
R8
tEHQZ
CE# to Output in
High Z
(2)
20
20
25
25
25
25
ns
R9
tGHQZ
OE# to Output in
High Z(2)
20
20
25
25
25
25
ns
R10
tOH
Output Hold from
Address, CE#, or
OE# Change,
Whichever Occurs
First(2)
0
000
00
ns



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